A 300 GHz mHEMT amplifier module
In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits...
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| creator | Tessmann, A. Leuther, A. Hurm, V. Massler, H. Zink, M. Kuri, M. Riessle, M. Losch, R. Schlechtweg, M. Ambacher, O. |
| description | In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A single-stage cascode design achieved a small-signal gain of 5.6 dB at 300 GHz and a linear gain of more than 5 dB between 258 and 308 GHz. Additionally, a four-stage amplifier S-MMIC based on conventional devices in common-source configuration was realized, demonstrating a maximum gain of 15.6 dB at 276 GHz and a linear gain of more than 12 dB over the frequency range from 264 to 300 GHz. Finally, mounting and packaging of the monolithic amplifier chips into H-band waveguide modules was accomplished with only minor reduction in circuit performance. |
| doi_str_mv | 10.1109/ICIPRM.2009.5012477 |
| format | Conference Proceeding |
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Finally, mounting and packaging of the monolithic amplifier chips into H-band waveguide modules was accomplished with only minor reduction in circuit performance.</description><subject>Gain</subject><subject>HEMTs</subject><subject>High-resolution imaging</subject><subject>Indium compounds</subject><subject>Indium gallium arsenide</subject><subject>mHEMTs</subject><subject>MODFETs</subject><subject>Monolithic integrated circuits</subject><subject>Submillimeter wave integrated circuits</subject><subject>Submillimeter wave technology</subject><issn>1092-8669</issn><isbn>9781424434329</isbn><isbn>1424434327</isbn><isbn>9781424434336</isbn><isbn>1424434335</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVj0FLw0AUhFdUsNb-gl72DyS-3be7b9-xhNoEWiylnsum2cBKgiXRg_56A_biaRiYb5gRYqkgVwr4uSqq_WGXawDOLShtiG7Egskro41Bg-hu_3nNd2I2kTrzzvGDeBzHdwCwpP1MyJVEALkpf2RfrndHGfpLl9oUB9l_NF9dfBL3bejGuLjqXLy9rI9FmW1fN1Wx2mZJkf3MaofYeDyH1kStuW60c5EMB2BDGKP1FNhbhjNxHZhcPQXATwttQ9YbnIvlX2-KMZ4uQ-rD8H26HsRfpHw-Dg</recordid><startdate>200905</startdate><enddate>200905</enddate><creator>Tessmann, A.</creator><creator>Leuther, A.</creator><creator>Hurm, V.</creator><creator>Massler, H.</creator><creator>Zink, M.</creator><creator>Kuri, M.</creator><creator>Riessle, M.</creator><creator>Losch, R.</creator><creator>Schlechtweg, M.</creator><creator>Ambacher, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200905</creationdate><title>A 300 GHz mHEMT amplifier module</title><author>Tessmann, A. ; Leuther, A. ; Hurm, V. ; Massler, H. ; Zink, M. ; Kuri, M. ; Riessle, M. ; Losch, R. ; Schlechtweg, M. ; Ambacher, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-b633d83caf4e229bd266e749a09473ee587a98590c79ba976b266082445d75843</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Gain</topic><topic>HEMTs</topic><topic>High-resolution imaging</topic><topic>Indium compounds</topic><topic>Indium gallium arsenide</topic><topic>mHEMTs</topic><topic>MODFETs</topic><topic>Monolithic integrated circuits</topic><topic>Submillimeter wave integrated circuits</topic><topic>Submillimeter wave technology</topic><toplevel>online_resources</toplevel><creatorcontrib>Tessmann, A.</creatorcontrib><creatorcontrib>Leuther, A.</creatorcontrib><creatorcontrib>Hurm, V.</creatorcontrib><creatorcontrib>Massler, H.</creatorcontrib><creatorcontrib>Zink, M.</creatorcontrib><creatorcontrib>Kuri, M.</creatorcontrib><creatorcontrib>Riessle, M.</creatorcontrib><creatorcontrib>Losch, R.</creatorcontrib><creatorcontrib>Schlechtweg, M.</creatorcontrib><creatorcontrib>Ambacher, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tessmann, A.</au><au>Leuther, A.</au><au>Hurm, V.</au><au>Massler, H.</au><au>Zink, M.</au><au>Kuri, M.</au><au>Riessle, M.</au><au>Losch, R.</au><au>Schlechtweg, M.</au><au>Ambacher, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 300 GHz mHEMT amplifier module</atitle><btitle>2009 IEEE International Conference on Indium Phosphide & Related Materials</btitle><stitle>ICIPRM</stitle><date>2009-05</date><risdate>2009</risdate><spage>196</spage><epage>199</epage><pages>196-199</pages><issn>1092-8669</issn><isbn>9781424434329</isbn><isbn>1424434327</isbn><eisbn>9781424434336</eisbn><eisbn>1424434335</eisbn><abstract>In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in next generation active and passive high-resolution imaging systems operating around 300 GHz. Therefore, a variety of compact amplifier circuits has been realized by using an advanced 35 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. A single-stage cascode design achieved a small-signal gain of 5.6 dB at 300 GHz and a linear gain of more than 5 dB between 258 and 308 GHz. Additionally, a four-stage amplifier S-MMIC based on conventional devices in common-source configuration was realized, demonstrating a maximum gain of 15.6 dB at 276 GHz and a linear gain of more than 12 dB over the frequency range from 264 to 300 GHz. Finally, mounting and packaging of the monolithic amplifier chips into H-band waveguide modules was accomplished with only minor reduction in circuit performance.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2009.5012477</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1092-8669 |
| ispartof | 2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.196-199 |
| issn | 1092-8669 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Gain HEMTs High-resolution imaging Indium compounds Indium gallium arsenide mHEMTs MODFETs Monolithic integrated circuits Submillimeter wave integrated circuits Submillimeter wave technology |
| title | A 300 GHz mHEMT amplifier module |
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