High detection efficiency InGaAs/InP single photon avalanche photodiodes

InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mum is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.

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Bibliographische Detailangaben
Hauptverfasser:	Yonglin Gu, Xiucheng Wu, Fow-Sen Choa
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Avalanche photodiodes Cooling Counting circuits Indium gallium arsenide Indium phosphide Infrared detectors Optical attenuators Optical fiber communication Superconducting device noise Superconducting materials
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Beschreibung
Zusammenfassung:	InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mum is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2009.5012462