Using n-channel TFTs without LDD structures for high stabilities of 1.2-V high-density SRAMs
In high-density SRAMs, cell-stability issues have limited the lower boundary of the operation voltage (V/sub DD/) for low-power applications. In 1990, p-channel thin-film-transistors (TFTs) were introduced to make 3.3-V operation possible. As V/sub DD/ dropped to 2.0 V in 1991, however, p-TFTs could...
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| creator | Liu, C.T. Diodato, P.W. Lee, K.H. Gong, H.I. |
| description | In high-density SRAMs, cell-stability issues have limited the lower boundary of the operation voltage (V/sub DD/) for low-power applications. In 1990, p-channel thin-film-transistors (TFTs) were introduced to make 3.3-V operation possible. As V/sub DD/ dropped to 2.0 V in 1991, however, p-TFTs could not solve the stability issues and cell /spl beta/ ratios as large as 4.4 had to be used, and 1.2-V operation was not possible in the analyses at all. In addition to stability issues, hot carrier aging and sodium-ions also limited the memory density through the limits of device dimensions. In this paper we have demonstrated that 1.2-V SRAM cells with high stabilities can be designed with n-channel TFTs and p-MOSFETs. The n-TFTs are also easier to fabricate and have superior characteristics than p-TFTs. |
| doi_str_mv | 10.1109/IEDM.1995.499366 |
| format | Conference Proceeding |
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In 1990, p-channel thin-film-transistors (TFTs) were introduced to make 3.3-V operation possible. As V/sub DD/ dropped to 2.0 V in 1991, however, p-TFTs could not solve the stability issues and cell /spl beta/ ratios as large as 4.4 had to be used, and 1.2-V operation was not possible in the analyses at all. In addition to stability issues, hot carrier aging and sodium-ions also limited the memory density through the limits of device dimensions. In this paper we have demonstrated that 1.2-V SRAM cells with high stabilities can be designed with n-channel TFTs and p-MOSFETs. The n-TFTs are also easier to fabricate and have superior characteristics than p-TFTs.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780327004</identifier><identifier>ISBN: 9780780327009</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1995.499366</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aging ; Design optimization ; FETs ; Hot carriers ; MOSFET circuits ; Process design ; Random access memory ; Stability analysis ; Thin film transistors ; Voltage</subject><ispartof>Proceedings of International Electron Devices Meeting, 1995, p.919-922</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/499366$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/499366$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liu, C.T.</creatorcontrib><creatorcontrib>Diodato, P.W.</creatorcontrib><creatorcontrib>Lee, K.H.</creatorcontrib><creatorcontrib>Gong, H.I.</creatorcontrib><title>Using n-channel TFTs without LDD structures for high stabilities of 1.2-V high-density SRAMs</title><title>Proceedings of International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>In high-density SRAMs, cell-stability issues have limited the lower boundary of the operation voltage (V/sub DD/) for low-power applications. 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The n-TFTs are also easier to fabricate and have superior characteristics than p-TFTs.</description><subject>Aging</subject><subject>Design optimization</subject><subject>FETs</subject><subject>Hot carriers</subject><subject>MOSFET circuits</subject><subject>Process design</subject><subject>Random access memory</subject><subject>Stability analysis</subject><subject>Thin film transistors</subject><subject>Voltage</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780327004</isbn><isbn>9780780327009</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUN1LwzAcDH6A2_RdfMo_kPr7JU3SPI596GBD0E58EEbapmtkdtJkjP33FufTcXfcwR0h9wgJIpjHxWy6StAYmaTGCKUuyICjVAxQf1ySIegMBNcA6RUZACrB0GB2Q4YhfAFwLY0ckM918O2WtqxsbNu6Hc3neaBHH5v9IdLldEpD7A5lPHQu0Hrf0cZvm16zhd_56HtxX1NMOHv_c1jl2uDjib69jlfhllzXdhfc3T-OyHo-yyfPbPnytJiMl8yj5rHPGKlUXVYauVXcWpspKJ0xhbKZ0FCmaSVUVUqrlEgNGFnxAvttdU9E6sSIPJx7vXNu89P5b9udNudTxC_ZpFKv</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Liu, C.T.</creator><creator>Diodato, P.W.</creator><creator>Lee, K.H.</creator><creator>Gong, H.I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Using n-channel TFTs without LDD structures for high stabilities of 1.2-V high-density SRAMs</title><author>Liu, C.T. ; Diodato, P.W. ; Lee, K.H. ; Gong, H.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-de9566fcd712a62aaa860ce99b6a8370c44d36dc5a66349095d2b1032f49034e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Aging</topic><topic>Design optimization</topic><topic>FETs</topic><topic>Hot carriers</topic><topic>MOSFET circuits</topic><topic>Process design</topic><topic>Random access memory</topic><topic>Stability analysis</topic><topic>Thin film transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Liu, C.T.</creatorcontrib><creatorcontrib>Diodato, P.W.</creatorcontrib><creatorcontrib>Lee, K.H.</creatorcontrib><creatorcontrib>Gong, H.I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liu, C.T.</au><au>Diodato, P.W.</au><au>Lee, K.H.</au><au>Gong, H.I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Using n-channel TFTs without LDD structures for high stabilities of 1.2-V high-density SRAMs</atitle><btitle>Proceedings of International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1995</date><risdate>1995</risdate><spage>919</spage><epage>922</epage><pages>919-922</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780327004</isbn><isbn>9780780327009</isbn><abstract>In high-density SRAMs, cell-stability issues have limited the lower boundary of the operation voltage (V/sub DD/) for low-power applications. In 1990, p-channel thin-film-transistors (TFTs) were introduced to make 3.3-V operation possible. As V/sub DD/ dropped to 2.0 V in 1991, however, p-TFTs could not solve the stability issues and cell /spl beta/ ratios as large as 4.4 had to be used, and 1.2-V operation was not possible in the analyses at all. In addition to stability issues, hot carrier aging and sodium-ions also limited the memory density through the limits of device dimensions. In this paper we have demonstrated that 1.2-V SRAM cells with high stabilities can be designed with n-channel TFTs and p-MOSFETs. The n-TFTs are also easier to fabricate and have superior characteristics than p-TFTs.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1995.499366</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | Proceedings of International Electron Devices Meeting, 1995, p.919-922 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_499366 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aging Design optimization FETs Hot carriers MOSFET circuits Process design Random access memory Stability analysis Thin film transistors Voltage |
| title | Using n-channel TFTs without LDD structures for high stabilities of 1.2-V high-density SRAMs |
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