Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy
We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon...
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| creator | King, C.A. Johnson, R.W. Chen, Y.K. Chiu, T.-Y. Cirelli, R.A. Chin, G.M. Frei, M.R. Kornblit, A. Schwartz, G.P. |
| description | We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon emitter contact to provide low R/sub E/ (9 to 12 /spl Omega/ for A/sub E/=0.5/spl times/10 /spl mu/m/sup 2/) without the enhanced diffusion effects associated with direct implantation or phosphorous doped poly emitters. In addition, we studied the effects of the extrinsic base implant position on the device I-V characteristics, junction capacitances, and high frequency performance. The collector current increased by over 3 decades as the extrinsic base implant position moved from the single crystal region to an adjacent poly region due to the containment of damage. S-parameter measurements of a 0.5/spl times/10 /spl mu/m/sup 2/ device yielded a cutoff frequency of 54 GHz for V/sub CE/=1.5 V and I/sub C/=14.8 mA. |
| doi_str_mv | 10.1109/IEDM.1995.499327 |
| format | Conference Proceeding |
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The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon emitter contact to provide low R/sub E/ (9 to 12 /spl Omega/ for A/sub E/=0.5/spl times/10 /spl mu/m/sup 2/) without the enhanced diffusion effects associated with direct implantation or phosphorous doped poly emitters. In addition, we studied the effects of the extrinsic base implant position on the device I-V characteristics, junction capacitances, and high frequency performance. The collector current increased by over 3 decades as the extrinsic base implant position moved from the single crystal region to an adjacent poly region due to the containment of damage. S-parameter measurements of a 0.5/spl times/10 /spl mu/m/sup 2/ device yielded a cutoff frequency of 54 GHz for V/sub CE/=1.5 V and I/sub C/=14.8 mA.</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780327004</identifier><identifier>ISBN: 9780780327009</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1995.499327</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance-voltage characteristics ; Doping ; Epitaxial growth ; Frequency ; Germanium alloys ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Implants ; Scattering parameters ; Silicon germanium</subject><ispartof>Proceedings of International Electron Devices Meeting, 1995, p.751-754</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/499327$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,782,786,791,792,2060,4052,4053,27932,54927</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/499327$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>King, C.A.</creatorcontrib><creatorcontrib>Johnson, R.W.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Chiu, T.-Y.</creatorcontrib><creatorcontrib>Cirelli, R.A.</creatorcontrib><creatorcontrib>Chin, G.M.</creatorcontrib><creatorcontrib>Frei, M.R.</creatorcontrib><creatorcontrib>Kornblit, A.</creatorcontrib><creatorcontrib>Schwartz, G.P.</creatorcontrib><title>Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy</title><title>Proceedings of International Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon emitter contact to provide low R/sub E/ (9 to 12 /spl Omega/ for A/sub E/=0.5/spl times/10 /spl mu/m/sup 2/) without the enhanced diffusion effects associated with direct implantation or phosphorous doped poly emitters. In addition, we studied the effects of the extrinsic base implant position on the device I-V characteristics, junction capacitances, and high frequency performance. The collector current increased by over 3 decades as the extrinsic base implant position moved from the single crystal region to an adjacent poly region due to the containment of damage. S-parameter measurements of a 0.5/spl times/10 /spl mu/m/sup 2/ device yielded a cutoff frequency of 54 GHz for V/sub CE/=1.5 V and I/sub C/=14.8 mA.</description><subject>Capacitance-voltage characteristics</subject><subject>Doping</subject><subject>Epitaxial growth</subject><subject>Frequency</subject><subject>Germanium alloys</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Implants</subject><subject>Scattering parameters</subject><subject>Silicon germanium</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780327004</isbn><isbn>9780780327009</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9T8tOwzAQtHhIpMAdcdofSOJNmqY-Qyk9cIIDt2rTLq0r145sB9Iv4XcJFIkb0kgzmpnVaoS4QZkhSpUvZvdPGSpVZWOlyqI-EUmB1SSVWL-eipGsp3JwpRyfiUTipExR4fRCjELYSVnUlaoS8bmwkTeeIjWGgewajPuAhgKD56BDJLtieNb5gNA1gGmfz_lH9jlsObJ3u86uonYWGt06Qx6iJ_t963yALmi7gcCGh8778YV1Nv1zPLV6DXHLfk8GuNWR-sOVOH8jE_j6ly_F7cPs5e4x1cy8bL3ekz8sj7vLf8MvnhpcAQ</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>King, C.A.</creator><creator>Johnson, R.W.</creator><creator>Chen, Y.K.</creator><creator>Chiu, T.-Y.</creator><creator>Cirelli, R.A.</creator><creator>Chin, G.M.</creator><creator>Frei, M.R.</creator><creator>Kornblit, A.</creator><creator>Schwartz, G.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy</title><author>King, C.A. ; Johnson, R.W. ; Chen, Y.K. ; Chiu, T.-Y. ; Cirelli, R.A. ; Chin, G.M. ; Frei, M.R. ; Kornblit, A. ; Schwartz, G.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_4993273</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Capacitance-voltage characteristics</topic><topic>Doping</topic><topic>Epitaxial growth</topic><topic>Frequency</topic><topic>Germanium alloys</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Implants</topic><topic>Scattering parameters</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>King, C.A.</creatorcontrib><creatorcontrib>Johnson, R.W.</creatorcontrib><creatorcontrib>Chen, Y.K.</creatorcontrib><creatorcontrib>Chiu, T.-Y.</creatorcontrib><creatorcontrib>Cirelli, R.A.</creatorcontrib><creatorcontrib>Chin, G.M.</creatorcontrib><creatorcontrib>Frei, M.R.</creatorcontrib><creatorcontrib>Kornblit, A.</creatorcontrib><creatorcontrib>Schwartz, G.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>King, C.A.</au><au>Johnson, R.W.</au><au>Chen, Y.K.</au><au>Chiu, T.-Y.</au><au>Cirelli, R.A.</au><au>Chin, G.M.</au><au>Frei, M.R.</au><au>Kornblit, A.</au><au>Schwartz, G.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy</atitle><btitle>Proceedings of International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1995</date><risdate>1995</risdate><spage>751</spage><epage>754</epage><pages>751-754</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780327004</isbn><isbn>9780780327009</isbn><abstract>We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon emitter contact to provide low R/sub E/ (9 to 12 /spl Omega/ for A/sub E/=0.5/spl times/10 /spl mu/m/sup 2/) without the enhanced diffusion effects associated with direct implantation or phosphorous doped poly emitters. In addition, we studied the effects of the extrinsic base implant position on the device I-V characteristics, junction capacitances, and high frequency performance. The collector current increased by over 3 decades as the extrinsic base implant position moved from the single crystal region to an adjacent poly region due to the containment of damage. S-parameter measurements of a 0.5/spl times/10 /spl mu/m/sup 2/ device yielded a cutoff frequency of 54 GHz for V/sub CE/=1.5 V and I/sub C/=14.8 mA.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1995.499327</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | Proceedings of International Electron Devices Meeting, 1995, p.751-754 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_499327 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance-voltage characteristics Doping Epitaxial growth Frequency Germanium alloys Germanium silicon alloys Heterojunction bipolar transistors Implants Scattering parameters Silicon germanium |
| title | Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy |
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