Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime

Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 mum is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values o...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2009-05, Vol.15 (3), p.634-643
Hauptverfasser:	Heck, M.J.R., Renault, A., Bente, E.A.J.M., Yok-Siang Oei, Smit, M.K., Eikema, K.S.E., Ubachs, W., Anantathanasarn, S., Notzel, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Diode lasers Indium phosphide Jitter Laser mode locking Laser stability Mode-locked lasers Power lasers Power markets Quantum dot lasers quantum dots semiconductor lasers Voltage
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