Novel SiC device technology featuring enhancement and depletion mode transistors

Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. Some of the devices which have been fabricated in SiC include the MOSFET, MESFET, thyristo...

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Bibliographische Detailangaben

Hauptverfasser:	Siergiej, R.R., Agarwal, A.K., Wagner, W.E., White, M.H., Brandt, C.D., Driver, M.C., Hopkins, R.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit testing Dielectric substrates Driver circuits Etching Fabrication Integrated circuit technology MOSFET circuits Silicon carbide Space technology Transconductance
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