Novel SiC device technology featuring enhancement and depletion mode transistors
Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. Some of the devices which have been fabricated in SiC include the MOSFET, MESFET, thyristo...
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| creator | Siergiej, R.R. Agarwal, A.K. Wagner, W.E. White, M.H. Brandt, C.D. Driver, M.C. Hopkins, R.H. |
| description | Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. Some of the devices which have been fabricated in SiC include the MOSFET, MESFET, thyristor, JFET, and UMOS. Additionally some devices, such as MOSFETs and MESFETs, have been utilized in integrated form to demonstrate digital and analog circuitry. However, the MOS devices used in integrated circuits have all been of one type, either enhancement or depletion. It is the purpose of the present study to investigate an integrated circuit technology which provides both enhancement and depletion mode NMOS transistors. This type of circuit technology is desirable for high-density circuit integration schemes since it consumes less area than an all enhancement or depletion mode design. |
| doi_str_mv | 10.1109/DRC.1995.496287 |
| format | Conference Proceeding |
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This type of circuit technology is desirable for high-density circuit integration schemes since it consumes less area than an all enhancement or depletion mode design.</description><identifier>ISBN: 0780327888</identifier><identifier>ISBN: 9780780327887</identifier><identifier>DOI: 10.1109/DRC.1995.496287</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit testing ; Dielectric substrates ; Driver circuits ; Etching ; Fabrication ; Integrated circuit technology ; MOSFET circuits ; Silicon carbide ; Space technology ; Transconductance</subject><ispartof>1995 53rd Annual Device Research Conference Digest, 1995, p.98-99</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/496287$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/496287$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Siergiej, R.R.</creatorcontrib><creatorcontrib>Agarwal, A.K.</creatorcontrib><creatorcontrib>Wagner, W.E.</creatorcontrib><creatorcontrib>White, M.H.</creatorcontrib><creatorcontrib>Brandt, C.D.</creatorcontrib><creatorcontrib>Driver, M.C.</creatorcontrib><creatorcontrib>Hopkins, R.H.</creatorcontrib><title>Novel SiC device technology featuring enhancement and depletion mode transistors</title><title>1995 53rd Annual Device Research Conference Digest</title><addtitle>DRC</addtitle><description>Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. 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This type of circuit technology is desirable for high-density circuit integration schemes since it consumes less area than an all enhancement or depletion mode design.</description><subject>Circuit testing</subject><subject>Dielectric substrates</subject><subject>Driver circuits</subject><subject>Etching</subject><subject>Fabrication</subject><subject>Integrated circuit technology</subject><subject>MOSFET circuits</subject><subject>Silicon carbide</subject><subject>Space technology</subject><subject>Transconductance</subject><isbn>0780327888</isbn><isbn>9780780327887</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jjsLwjAYRQMi-OosOOUPWJM-bDJXxUlE3Utov7aRNClJLPjvLejsXe5w7oGL0JqSkFLCd4dbHlLO0zDh-4hlE7QgGSNxlDHGZihw7knGJGmakGyOrhczgMJ3meMKBlkC9lC22ijTvHENwr-s1A0G3QpdQgfaY6Grcdsr8NJo3JlqdKzQTjpvrFuhaS2Ug-DXS7Q5HR_5eSsBoOit7IR9F99v8V_4ATvcPp4</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Siergiej, R.R.</creator><creator>Agarwal, A.K.</creator><creator>Wagner, W.E.</creator><creator>White, M.H.</creator><creator>Brandt, C.D.</creator><creator>Driver, M.C.</creator><creator>Hopkins, R.H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Novel SiC device technology featuring enhancement and depletion mode transistors</title><author>Siergiej, R.R. ; Agarwal, A.K. ; Wagner, W.E. ; White, M.H. ; Brandt, C.D. ; Driver, M.C. ; Hopkins, R.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_4962873</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Circuit testing</topic><topic>Dielectric substrates</topic><topic>Driver circuits</topic><topic>Etching</topic><topic>Fabrication</topic><topic>Integrated circuit technology</topic><topic>MOSFET circuits</topic><topic>Silicon carbide</topic><topic>Space technology</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Siergiej, R.R.</creatorcontrib><creatorcontrib>Agarwal, A.K.</creatorcontrib><creatorcontrib>Wagner, W.E.</creatorcontrib><creatorcontrib>White, M.H.</creatorcontrib><creatorcontrib>Brandt, C.D.</creatorcontrib><creatorcontrib>Driver, M.C.</creatorcontrib><creatorcontrib>Hopkins, R.H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Siergiej, R.R.</au><au>Agarwal, A.K.</au><au>Wagner, W.E.</au><au>White, M.H.</au><au>Brandt, C.D.</au><au>Driver, M.C.</au><au>Hopkins, R.H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Novel SiC device technology featuring enhancement and depletion mode transistors</atitle><btitle>1995 53rd Annual Device Research Conference Digest</btitle><stitle>DRC</stitle><date>1995</date><risdate>1995</risdate><spage>98</spage><epage>99</epage><pages>98-99</pages><isbn>0780327888</isbn><isbn>9780780327887</isbn><abstract>Silicon Carbide (SiC) has enjoyed rapid success in discrete device development primarily due to the availability of single crystal wafers and the similarities which exist with present day silicon technologies. 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| identifier | ISBN: 0780327888 |
| ispartof | 1995 53rd Annual Device Research Conference Digest, 1995, p.98-99 |
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| language | eng |
| recordid | cdi_ieee_primary_496287 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit testing Dielectric substrates Driver circuits Etching Fabrication Integrated circuit technology MOSFET circuits Silicon carbide Space technology Transconductance |
| title | Novel SiC device technology featuring enhancement and depletion mode transistors |
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