Fabrication of GaAs Gunn diodes using trench method

We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the neg...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mi-Ra Kim, Seong-Dae Lee, Jae-Seo Lee, Jin-Koo Rhee, Sam-Dong Kim, No-Seung Kwak, Yeon-Sik Chae, Wan-Joo Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Cathodes Etching Fabrication Gallium arsenide Gold Gunn devices Heat sinks Metallization Semiconductor diodes
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