Fabrication of GaAs Gunn diodes using trench method
We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the neg...
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| creator | Mi-Ra Kim Seong-Dae Lee Jae-Seo Lee Jin-Koo Rhee Sam-Dong Kim No-Seung Kwak Yeon-Sik Chae Wan-Joo Kim |
| description | We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink. |
| doi_str_mv | 10.1109/APMC.2008.4958387 |
| format | Conference Proceeding |
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We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink.</description><identifier>ISSN: 2165-4727</identifier><identifier>ISBN: 9781424426416</identifier><identifier>ISBN: 1424426413</identifier><identifier>EISSN: 2165-4743</identifier><identifier>EISBN: 9781424426423</identifier><identifier>EISBN: 1424426421</identifier><identifier>DOI: 10.1109/APMC.2008.4958387</identifier><identifier>LCCN: 2008905035</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Cathodes ; Etching ; Fabrication ; Gallium arsenide ; Gold ; Gunn devices ; Heat sinks ; Metallization ; Semiconductor diodes</subject><ispartof>2008 Asia-Pacific Microwave Conference, 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4958387$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4958387$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mi-Ra Kim</creatorcontrib><creatorcontrib>Seong-Dae Lee</creatorcontrib><creatorcontrib>Jae-Seo Lee</creatorcontrib><creatorcontrib>Jin-Koo Rhee</creatorcontrib><creatorcontrib>Sam-Dong Kim</creatorcontrib><creatorcontrib>No-Seung Kwak</creatorcontrib><creatorcontrib>Yeon-Sik Chae</creatorcontrib><creatorcontrib>Wan-Joo Kim</creatorcontrib><title>Fabrication of GaAs Gunn diodes using trench method</title><title>2008 Asia-Pacific Microwave Conference</title><addtitle>APMC</addtitle><description>We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink.</description><subject>Anodes</subject><subject>Cathodes</subject><subject>Etching</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Gold</subject><subject>Gunn devices</subject><subject>Heat sinks</subject><subject>Metallization</subject><subject>Semiconductor diodes</subject><issn>2165-4727</issn><issn>2165-4743</issn><isbn>9781424426416</isbn><isbn>1424426413</isbn><isbn>9781424426423</isbn><isbn>1424426421</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtOwzAURM2jEqXkAxAb_0DC9dteRhENlVrBovvKjm1qRBMUpwv-nleFxGxmpCOdxSB0S6AiBMx9_bxpKgqgK26EZlqdocIoTTjlnEpO2TmaUyJFyRVnF_8YkZd_jKoZuv7WGBDAxBUqcn6Fr3DBpFJzxJbWjamzUxp6PETc2jrj9tj32KfBh4yPOfUveBpD3-3xIUz7wd-gWbRvORSnXqDt8mHbPJbrp3bV1OsyGZhKH7WLwnVArXBOKOkkC7T7GZE744RTIExU0gYCWkpto4WgqXZc-ejZAt39alMIYfc-poMdP3anO9gnLVZL_w</recordid><startdate>200812</startdate><enddate>200812</enddate><creator>Mi-Ra Kim</creator><creator>Seong-Dae Lee</creator><creator>Jae-Seo Lee</creator><creator>Jin-Koo Rhee</creator><creator>Sam-Dong Kim</creator><creator>No-Seung Kwak</creator><creator>Yeon-Sik Chae</creator><creator>Wan-Joo Kim</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200812</creationdate><title>Fabrication of GaAs Gunn diodes using trench method</title><author>Mi-Ra Kim ; Seong-Dae Lee ; Jae-Seo Lee ; Jin-Koo Rhee ; Sam-Dong Kim ; No-Seung Kwak ; Yeon-Sik Chae ; Wan-Joo Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-df8bf5bc02a5bb576b63e2c576b6f4b9b5b7059f76ae108668afa0e828b47dfd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Anodes</topic><topic>Cathodes</topic><topic>Etching</topic><topic>Fabrication</topic><topic>Gallium arsenide</topic><topic>Gold</topic><topic>Gunn devices</topic><topic>Heat sinks</topic><topic>Metallization</topic><topic>Semiconductor diodes</topic><toplevel>online_resources</toplevel><creatorcontrib>Mi-Ra Kim</creatorcontrib><creatorcontrib>Seong-Dae Lee</creatorcontrib><creatorcontrib>Jae-Seo Lee</creatorcontrib><creatorcontrib>Jin-Koo Rhee</creatorcontrib><creatorcontrib>Sam-Dong Kim</creatorcontrib><creatorcontrib>No-Seung Kwak</creatorcontrib><creatorcontrib>Yeon-Sik Chae</creatorcontrib><creatorcontrib>Wan-Joo Kim</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mi-Ra Kim</au><au>Seong-Dae Lee</au><au>Jae-Seo Lee</au><au>Jin-Koo Rhee</au><au>Sam-Dong Kim</au><au>No-Seung Kwak</au><au>Yeon-Sik Chae</au><au>Wan-Joo Kim</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication of GaAs Gunn diodes using trench method</atitle><btitle>2008 Asia-Pacific Microwave Conference</btitle><stitle>APMC</stitle><date>2008-12</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>2165-4727</issn><eissn>2165-4743</eissn><isbn>9781424426416</isbn><isbn>1424426413</isbn><eisbn>9781424426423</eisbn><eisbn>1424426421</eisbn><abstract>We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink.</abstract><pub>IEEE</pub><doi>10.1109/APMC.2008.4958387</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2165-4727 |
| ispartof | 2008 Asia-Pacific Microwave Conference, 2008, p.1-4 |
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| language | eng |
| recordid | cdi_ieee_primary_4958387 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Cathodes Etching Fabrication Gallium arsenide Gold Gunn devices Heat sinks Metallization Semiconductor diodes |
| title | Fabrication of GaAs Gunn diodes using trench method |
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