Deep energy levels in N-type silicon introduced by palladium diffusion

The results of a study carried out on N-type silicon diffused with palladium using DLTS method are reported. In the case of diffusion temperature 860/spl deg/C, diffusion time influence the deep levels related to Pd-induced defects. In the case of short-time diffusion (4 minutes) two significant ene...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Benda, V., Stepkova, D., Fucikova, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conductivity Crystals Doping Energy states Etching Fabrication Impurities Palladium Silicon Temperature
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