The photoluminescence in electrochemically oxidized porous silicon

The photoluminescence in electrochemically oxidized porous silicon

Some oxidized porous silicon samples exhibit an amorphous phase with the approximate composition SiO/sub 1.6/. The particular features of the photoluminescence spectra were tentatively ascribed to the contribution of the interface between silicon and the non-stoichiometric oxide.

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Bibliographische Detailangaben
Hauptverfasser: Popescu, M., Chumash, V., Cojocaru, I., Zamfira, S., Jain, V.K., Gupta, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Microstructure
Optical films
Oxidation
Photoluminescence
Physics
Silicon
Stimulated emission
Temperature measurement
X-ray diffraction
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Beschreibung
Zusammenfassung:Some oxidized porous silicon samples exhibit an amorphous phase with the approximate composition SiO/sub 1.6/. The particular features of the photoluminescence spectra were tentatively ascribed to the contribution of the interface between silicon and the non-stoichiometric oxide.
DOI:10.1109/SMICND.1995.494885