Dynamic compact model of Spin-Transfer Torque based Magnetic Tunnel Junction (MTJ)

The integration of magnetic tunnel junctions (MTJ) above CMOS circuits in embedded magnetic RAM (MRAM) or magnetic FPGA (MFPGA) could bring to digital circuits major advantages associated to non-volatile capability such as instant on/off, multi-context FPGA and zero standby power consumption. A comp...

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Bibliographische Detailangaben
Hauptverfasser:	Faber, L.-B., Weisheng Zhao, Klein, J.-O., Devolder, T., Chappert, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation CMOS digital integrated circuits Digital circuits dynamic and static behavoirs Energy consumption Field programmable gate arrays high speed low power Magnetic circuits Magnetic tunneling MRAM MTJ Semiconductor device modeling STT thermal effects Torque Writing
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