Defect-related trapping and recombination in metamorphic GaAs0.72P0.28 grown on GaAs

Since the bandgap of metamorphic GaAsP can be tuned through a range of energies in a high-radiance region of the solar spectrum, this alloy may be useful in multi-junction solar cells. For this application, achieving high conversion efficiency will require a good understanding of the defects that ac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gfroerer, T.H., Simov, P.R., West, B.A., Wanlass, M.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Energy states Gallium arsenide Photoluminescence Photonic band gap Photovoltaic cells Photovoltaic systems Solar power generation Spectroscopy Temperature Testing
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!