Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon
Using optical, transmission and scanning electron microscopy, the nucleation and growth of Aluminum-induced crystalline silicon was investigated in correlation with the microstructure of hydrogenated amorphous silicon (a-Si:H) deposited with plasma-enhanced chemical vapor deposition (PECVD) under di...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6 |
|---|---|
| container_issue | |
| container_start_page | 1 |
| container_title | |
| container_volume | |
| creator | Hsu, Kendrick Bui, Catvu H. Ou-Yang, Jeremy Minji Zhu Ren, Li P. Pan, Grant Z. |
| description | Using optical, transmission and scanning electron microscopy, the nucleation and growth of Aluminum-induced crystalline silicon was investigated in correlation with the microstructure of hydrogenated amorphous silicon (a-Si:H) deposited with plasma-enhanced chemical vapor deposition (PECVD) under different power densities. It was found that the microstructure of a-Si:H contains a considerable fraction of interstitial regions associated with (SiH2)n chains. As the deposition power density increases, the fraction of interstitial regions increases and the formation of a-Si:H changes from one-dimensional columnar forms to two-dimensional islands. It is proposed that the nucleation and growth of Al-induced crystalline silicon is closely related to the interstitial regions found in the microstructure of PECVD a-Si:H. |
| doi_str_mv | 10.1109/PVSC.2008.4922807 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4922807</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4922807</ieee_id><sourcerecordid>4922807</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-c0b87e06edf5a9b5bc0f86bd1c28a63aabcc3e961a12534a3e3120fe1291d533</originalsourceid><addsrcrecordid>eNo1kM1qwkAUhae0QtX6AKWbeYHYe2eSyWQp6S9IK1jcymRyU6fERGYSxFVfvRZ1dTgHvm9xGLtHmCJC9rhYLfOpANDTOBNCQ3rFRhiLOEYVo75mkyzVlw5ww4aACiItUxywoY6j44pa3LJRCD8AAqTCIfv96G1NpnNtw01T8m_f7rsNbys-qyPXlL2lkm-d9a31h9CZunYN8eBqZ4-Ea7htvaf6JNi7I9pt6ASEzve26z2Ff93iOV89cbNt_W7T9uGiuGODytSBJuccs-XL81f-Fs0_X9_z2TxyGXSRhUKnBIrKKjFZkRQWKq2KEq3QRkljCmslZQoNikTGRpJEARWhyLBMpByzh5PVEdF6593W-MP6fKP8A68SZas</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Hsu, Kendrick ; Bui, Catvu H. ; Ou-Yang, Jeremy ; Minji Zhu ; Ren, Li P. ; Pan, Grant Z.</creator><creatorcontrib>Hsu, Kendrick ; Bui, Catvu H. ; Ou-Yang, Jeremy ; Minji Zhu ; Ren, Li P. ; Pan, Grant Z.</creatorcontrib><description>Using optical, transmission and scanning electron microscopy, the nucleation and growth of Aluminum-induced crystalline silicon was investigated in correlation with the microstructure of hydrogenated amorphous silicon (a-Si:H) deposited with plasma-enhanced chemical vapor deposition (PECVD) under different power densities. It was found that the microstructure of a-Si:H contains a considerable fraction of interstitial regions associated with (SiH2)n chains. As the deposition power density increases, the fraction of interstitial regions increases and the formation of a-Si:H changes from one-dimensional columnar forms to two-dimensional islands. It is proposed that the nucleation and growth of Al-induced crystalline silicon is closely related to the interstitial regions found in the microstructure of PECVD a-Si:H.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9781424416400</identifier><identifier>ISBN: 142441640X</identifier><identifier>EISBN: 1424416418</identifier><identifier>EISBN: 9781424416417</identifier><identifier>DOI: 10.1109/PVSC.2008.4922807</identifier><identifier>LCCN: 84-640182</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous silicon ; Chemical vapor deposition ; Crystal microstructure ; Crystallization ; Electron optics ; Optical microscopy ; Plasma chemistry ; Plasma density ; Scanning electron microscopy ; Transmission electron microscopy</subject><ispartof>2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-6</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4922807$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4922807$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hsu, Kendrick</creatorcontrib><creatorcontrib>Bui, Catvu H.</creatorcontrib><creatorcontrib>Ou-Yang, Jeremy</creatorcontrib><creatorcontrib>Minji Zhu</creatorcontrib><creatorcontrib>Ren, Li P.</creatorcontrib><creatorcontrib>Pan, Grant Z.</creatorcontrib><title>Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon</title><title>2008 33rd IEEE Photovoltaic Specialists Conference</title><addtitle>PVSC</addtitle><description>Using optical, transmission and scanning electron microscopy, the nucleation and growth of Aluminum-induced crystalline silicon was investigated in correlation with the microstructure of hydrogenated amorphous silicon (a-Si:H) deposited with plasma-enhanced chemical vapor deposition (PECVD) under different power densities. It was found that the microstructure of a-Si:H contains a considerable fraction of interstitial regions associated with (SiH2)n chains. As the deposition power density increases, the fraction of interstitial regions increases and the formation of a-Si:H changes from one-dimensional columnar forms to two-dimensional islands. It is proposed that the nucleation and growth of Al-induced crystalline silicon is closely related to the interstitial regions found in the microstructure of PECVD a-Si:H.</description><subject>Amorphous silicon</subject><subject>Chemical vapor deposition</subject><subject>Crystal microstructure</subject><subject>Crystallization</subject><subject>Electron optics</subject><subject>Optical microscopy</subject><subject>Plasma chemistry</subject><subject>Plasma density</subject><subject>Scanning electron microscopy</subject><subject>Transmission electron microscopy</subject><issn>0160-8371</issn><isbn>9781424416400</isbn><isbn>142441640X</isbn><isbn>1424416418</isbn><isbn>9781424416417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kM1qwkAUhae0QtX6AKWbeYHYe2eSyWQp6S9IK1jcymRyU6fERGYSxFVfvRZ1dTgHvm9xGLtHmCJC9rhYLfOpANDTOBNCQ3rFRhiLOEYVo75mkyzVlw5ww4aACiItUxywoY6j44pa3LJRCD8AAqTCIfv96G1NpnNtw01T8m_f7rsNbys-qyPXlL2lkm-d9a31h9CZunYN8eBqZ4-Ea7htvaf6JNi7I9pt6ASEzve26z2Ff93iOV89cbNt_W7T9uGiuGODytSBJuccs-XL81f-Fs0_X9_z2TxyGXSRhUKnBIrKKjFZkRQWKq2KEq3QRkljCmslZQoNikTGRpJEARWhyLBMpByzh5PVEdF6593W-MP6fKP8A68SZas</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Hsu, Kendrick</creator><creator>Bui, Catvu H.</creator><creator>Ou-Yang, Jeremy</creator><creator>Minji Zhu</creator><creator>Ren, Li P.</creator><creator>Pan, Grant Z.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200805</creationdate><title>Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon</title><author>Hsu, Kendrick ; Bui, Catvu H. ; Ou-Yang, Jeremy ; Minji Zhu ; Ren, Li P. ; Pan, Grant Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c0b87e06edf5a9b5bc0f86bd1c28a63aabcc3e961a12534a3e3120fe1291d533</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amorphous silicon</topic><topic>Chemical vapor deposition</topic><topic>Crystal microstructure</topic><topic>Crystallization</topic><topic>Electron optics</topic><topic>Optical microscopy</topic><topic>Plasma chemistry</topic><topic>Plasma density</topic><topic>Scanning electron microscopy</topic><topic>Transmission electron microscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Kendrick</creatorcontrib><creatorcontrib>Bui, Catvu H.</creatorcontrib><creatorcontrib>Ou-Yang, Jeremy</creatorcontrib><creatorcontrib>Minji Zhu</creatorcontrib><creatorcontrib>Ren, Li P.</creatorcontrib><creatorcontrib>Pan, Grant Z.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, Kendrick</au><au>Bui, Catvu H.</au><au>Ou-Yang, Jeremy</au><au>Minji Zhu</au><au>Ren, Li P.</au><au>Pan, Grant Z.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon</atitle><btitle>2008 33rd IEEE Photovoltaic Specialists Conference</btitle><stitle>PVSC</stitle><date>2008-05</date><risdate>2008</risdate><spage>1</spage><epage>6</epage><pages>1-6</pages><issn>0160-8371</issn><isbn>9781424416400</isbn><isbn>142441640X</isbn><eisbn>1424416418</eisbn><eisbn>9781424416417</eisbn><abstract>Using optical, transmission and scanning electron microscopy, the nucleation and growth of Aluminum-induced crystalline silicon was investigated in correlation with the microstructure of hydrogenated amorphous silicon (a-Si:H) deposited with plasma-enhanced chemical vapor deposition (PECVD) under different power densities. It was found that the microstructure of a-Si:H contains a considerable fraction of interstitial regions associated with (SiH2)n chains. As the deposition power density increases, the fraction of interstitial regions increases and the formation of a-Si:H changes from one-dimensional columnar forms to two-dimensional islands. It is proposed that the nucleation and growth of Al-induced crystalline silicon is closely related to the interstitial regions found in the microstructure of PECVD a-Si:H.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2008.4922807</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | 2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-6 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_4922807 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amorphous silicon Chemical vapor deposition Crystal microstructure Crystallization Electron optics Optical microscopy Plasma chemistry Plasma density Scanning electron microscopy Transmission electron microscopy |
| title | Nucleation and growth of Al-induced microcrystalline silicon in correlation with the microstructures of PECVD amorphous silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T06%3A20%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Nucleation%20and%20growth%20of%20Al-induced%20microcrystalline%20silicon%20in%20correlation%20with%20the%20microstructures%20of%20PECVD%20amorphous%20silicon&rft.btitle=2008%2033rd%20IEEE%20Photovoltaic%20Specialists%20Conference&rft.au=Hsu,%20Kendrick&rft.date=2008-05&rft.spage=1&rft.epage=6&rft.pages=1-6&rft.issn=0160-8371&rft.isbn=9781424416400&rft.isbn_list=142441640X&rft_id=info:doi/10.1109/PVSC.2008.4922807&rft_dat=%3Cieee_6IE%3E4922807%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424416418&rft.eisbn_list=9781424416417&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4922807&rfr_iscdi=true |