Effect of reaction temperature on Cu(InGa)(SeS)2 formation by a sequential H2Se/H2S precursor reaction process

The effect of sulfization temperature on Ga through-film uniformity in a 2-reaction H 2 Se/H 2 S precursor process for Cu(InGa)(SeS) 2 was studied. Cu 0.8 Ga 0.2 /In bi-layer precursors were prepared by sputter deposition. The precursors were then partially selenized at 450 °C, followed by sulfizati...

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Bibliographische Detailangaben

Hauptverfasser:	Hanket, Gregory M., Kamada, Rui, Kim, Woo Kyoung, Shafarman, William N.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Costs Etching Fabrication Geometry Gold Low voltage Photovoltaic cells Solid state circuits Temperature Wire
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