Reliability study of 850 nm VCSELs for data communications

We present reliability results for 850 nm Vertical Cavity Surface Emitting Laser (VCSEL) devices. Hundreds of parts from multiple wafer lots and package styles were subjected to burn-in for thousands of hours at various temperatures and currents, yielding more than one million device-hours of data....

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Hauptverfasser: Hawthorne, R.A., Guenter, J.K., Granville, D.N., Hibbs-Brenner, M.K., Morgan, R.A.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We present reliability results for 850 nm Vertical Cavity Surface Emitting Laser (VCSEL) devices. Hundreds of parts from multiple wafer lots and package styles were subjected to burn-in for thousands of hours at various temperatures and currents, yielding more than one million device-hours of data. Possible failure mechanisms are also discussed.
DOI:10.1109/RELPHY.1996.492120