Short loop monitoring of metal stepcoverage by simple electrical measurements
A metal stepcoverage monitoring method using simple electrical measurements has been developed to overcome drawbacks of the standard cross sectioning method. Application on Bicmos and bipolar processes show that (a) stepcoverage related design rules can be easily verified, (b) stepcoverage depends s...
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| creator | van der Pol, J.A. Ooms, E.R. Brugman, H.T. |
| description | A metal stepcoverage monitoring method using simple electrical measurements has been developed to overcome drawbacks of the standard cross sectioning method. Application on Bicmos and bipolar processes show that (a) stepcoverage related design rules can be easily verified, (b) stepcoverage depends strongly on metal sputter target lifetime making several runs with dummy wafers necessary after metal target change to guarantee good stepcoverage and (c) stepcoverage can vary significantly over the wafer surface demonstrating the importance of metal stepcoverage wafermap data. The effect of metal stepcoverage on electromigration resistance has been found to be very limited. The open failures often did not occur on the steps. The novel method is also well suited for metal stepcoverage control on production wafers and screening of weak parts and for short loop monitoring of metal deposition equipment and dielectric planarization processes. |
| doi_str_mv | 10.1109/RELPHY.1996.492075 |
| format | Conference Proceeding |
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Application on Bicmos and bipolar processes show that (a) stepcoverage related design rules can be easily verified, (b) stepcoverage depends strongly on metal sputter target lifetime making several runs with dummy wafers necessary after metal target change to guarantee good stepcoverage and (c) stepcoverage can vary significantly over the wafer surface demonstrating the importance of metal stepcoverage wafermap data. The effect of metal stepcoverage on electromigration resistance has been found to be very limited. The open failures often did not occur on the steps. The novel method is also well suited for metal stepcoverage control on production wafers and screening of weak parts and for short loop monitoring of metal deposition equipment and dielectric planarization processes.</description><identifier>ISBN: 0780327535</identifier><identifier>ISBN: 9780780327535</identifier><identifier>DOI: 10.1109/RELPHY.1996.492075</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; Condition monitoring ; Dielectrics ; Electric variables measurement ; Electromigration ; Measurement standards ; Open loop systems ; Production ; Standards development ; Surface resistance</subject><ispartof>Proceedings of International Reliability Physics Symposium, 1996, p.148-155</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/492075$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/492075$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>van der Pol, J.A.</creatorcontrib><creatorcontrib>Ooms, E.R.</creatorcontrib><creatorcontrib>Brugman, H.T.</creatorcontrib><title>Short loop monitoring of metal stepcoverage by simple electrical measurements</title><title>Proceedings of International Reliability Physics Symposium</title><addtitle>RELPHY</addtitle><description>A metal stepcoverage monitoring method using simple electrical measurements has been developed to overcome drawbacks of the standard cross sectioning method. Application on Bicmos and bipolar processes show that (a) stepcoverage related design rules can be easily verified, (b) stepcoverage depends strongly on metal sputter target lifetime making several runs with dummy wafers necessary after metal target change to guarantee good stepcoverage and (c) stepcoverage can vary significantly over the wafer surface demonstrating the importance of metal stepcoverage wafermap data. The effect of metal stepcoverage on electromigration resistance has been found to be very limited. The open failures often did not occur on the steps. The novel method is also well suited for metal stepcoverage control on production wafers and screening of weak parts and for short loop monitoring of metal deposition equipment and dielectric planarization processes.</description><subject>BiCMOS integrated circuits</subject><subject>Condition monitoring</subject><subject>Dielectrics</subject><subject>Electric variables measurement</subject><subject>Electromigration</subject><subject>Measurement standards</subject><subject>Open loop systems</subject><subject>Production</subject><subject>Standards development</subject><subject>Surface resistance</subject><isbn>0780327535</isbn><isbn>9780780327535</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj11LwzAYhQMiqHN_YFf5A61vvpr2UsZ0QkVx3ng10uztjDRNSaKwf29hOzfn5uHwHEJWDErGoHn42LTv26-SNU1VyoaDVlfkDnQNgmsl1A1ZpvQDc6RSXItb8rr7DjHTIYSJ-jC6HKIbjzT01GM2A00ZJxv-MJoj0u5Ek_PTgBQHtDk6OxMeTfqN6HHM6Z5c92ZIuLz0guyeNp_rbdG-Pb-sH9vC1ToXAivQltecAWNdL_qDZNZyicLaWazipjPmIE0lFTR1Bz2vrbQCgBnecSUWZHVedYi4n6LzJp7257viH3gwTNQ</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>van der Pol, J.A.</creator><creator>Ooms, E.R.</creator><creator>Brugman, H.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Short loop monitoring of metal stepcoverage by simple electrical measurements</title><author>van der Pol, J.A. ; Ooms, E.R. ; Brugman, H.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-3e607c2821011bf3fd41cc24e3cc04562abaad4a645098b0f28c4c3001a2b253</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>BiCMOS integrated circuits</topic><topic>Condition monitoring</topic><topic>Dielectrics</topic><topic>Electric variables measurement</topic><topic>Electromigration</topic><topic>Measurement standards</topic><topic>Open loop systems</topic><topic>Production</topic><topic>Standards development</topic><topic>Surface resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>van der Pol, J.A.</creatorcontrib><creatorcontrib>Ooms, E.R.</creatorcontrib><creatorcontrib>Brugman, H.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>van der Pol, J.A.</au><au>Ooms, E.R.</au><au>Brugman, H.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Short loop monitoring of metal stepcoverage by simple electrical measurements</atitle><btitle>Proceedings of International Reliability Physics Symposium</btitle><stitle>RELPHY</stitle><date>1996</date><risdate>1996</risdate><spage>148</spage><epage>155</epage><pages>148-155</pages><isbn>0780327535</isbn><isbn>9780780327535</isbn><abstract>A metal stepcoverage monitoring method using simple electrical measurements has been developed to overcome drawbacks of the standard cross sectioning method. Application on Bicmos and bipolar processes show that (a) stepcoverage related design rules can be easily verified, (b) stepcoverage depends strongly on metal sputter target lifetime making several runs with dummy wafers necessary after metal target change to guarantee good stepcoverage and (c) stepcoverage can vary significantly over the wafer surface demonstrating the importance of metal stepcoverage wafermap data. The effect of metal stepcoverage on electromigration resistance has been found to be very limited. The open failures often did not occur on the steps. The novel method is also well suited for metal stepcoverage control on production wafers and screening of weak parts and for short loop monitoring of metal deposition equipment and dielectric planarization processes.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.1996.492075</doi><tpages>8</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | BiCMOS integrated circuits Condition monitoring Dielectrics Electric variables measurement Electromigration Measurement standards Open loop systems Production Standards development Surface resistance |
| title | Short loop monitoring of metal stepcoverage by simple electrical measurements |
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