A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs
As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is v...
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| creator | Hasani, F. Fathipour, M. Karimi, F. |
| description | As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nanoelectronic applications. We have used quantum transport to investigate the effect of scattering due to coupling of the gate contact on the gate tunnelling current. We have developed a proper self energy term which is included within the Hamiltonian formalism for the Poisson Schrodinger solver. It will manifest the coupling of scattering parameter on the gate tunnelling current. |
| doi_str_mv | 10.1109/ULIS.2009.4897604 |
| format | Conference Proceeding |
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It will manifest the coupling of scattering parameter on the gate tunnelling current.</description><subject>Circuit simulation</subject><subject>dissipative transport</subject><subject>Electrons</subject><subject>gate tunneling current</subject><subject>Integrated circuit modeling</subject><subject>modeling</subject><subject>MOSFETs</subject><subject>Nanoscale devices</subject><subject>Nanotransistor</subject><subject>Particle scattering</subject><subject>Quantum mechanics</subject><subject>scattering self energy</subject><subject>Schrodinger equation</subject><subject>Semiconductor process modeling</subject><subject>Tunneling</subject><isbn>9781424437047</isbn><isbn>1424437040</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUMFOwzAUi4QmAWMfgLi8H-h4aV7T5jgNBpMKO3ScpzRNu6IuLWl64O-pxHyxZVs-mLFHjmvOUT1_5ftiHSOqNWUqlUg3bKXSjFNMJFKkdMHu5zhTnKskuWWrcfzGGZQIzsUdazbwM2kXpgsEr9049D6AHgbfa3OG0EM4WzC6M1OnQ9s76GtodLAQJuds17WuATN5b12A1sGndn00zn0LuxcoDnv4OBS71-P4wBa17ka7uvKSHWd7-x7lh7f9dpNHLU-TEHGFaCppSGZlXJp4FkQYy1jWphK6TsqqojJBslllqLZCYMaRc0mKNEqxZE__s6219jT49qL97-l6jfgDUc5W-w</recordid><startdate>200903</startdate><enddate>200903</enddate><creator>Hasani, F.</creator><creator>Fathipour, M.</creator><creator>Karimi, F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200903</creationdate><title>A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs</title><author>Hasani, F. ; Fathipour, M. ; Karimi, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-1900cd6c468b2bc2c464402626fcd3af5bdd4b504e8dc4fe330810116494a063</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Circuit simulation</topic><topic>dissipative transport</topic><topic>Electrons</topic><topic>gate tunneling current</topic><topic>Integrated circuit modeling</topic><topic>modeling</topic><topic>MOSFETs</topic><topic>Nanoscale devices</topic><topic>Nanotransistor</topic><topic>Particle scattering</topic><topic>Quantum mechanics</topic><topic>scattering self energy</topic><topic>Schrodinger equation</topic><topic>Semiconductor process modeling</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Hasani, F.</creatorcontrib><creatorcontrib>Fathipour, M.</creatorcontrib><creatorcontrib>Karimi, F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hasani, F.</au><au>Fathipour, M.</au><au>Karimi, F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs</atitle><btitle>2009 10th International Conference on Ultimate Integration of Silicon</btitle><stitle>ULIS</stitle><date>2009-03</date><risdate>2009</risdate><spage>337</spage><epage>340</epage><pages>337-340</pages><isbn>9781424437047</isbn><isbn>1424437040</isbn><abstract>As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nanoelectronic applications. We have used quantum transport to investigate the effect of scattering due to coupling of the gate contact on the gate tunnelling current. We have developed a proper self energy term which is included within the Hamiltonian formalism for the Poisson Schrodinger solver. It will manifest the coupling of scattering parameter on the gate tunnelling current.</abstract><pub>IEEE</pub><doi>10.1109/ULIS.2009.4897604</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit simulation dissipative transport Electrons gate tunneling current Integrated circuit modeling modeling MOSFETs Nanoscale devices Nanotransistor Particle scattering Quantum mechanics scattering self energy Schrodinger equation Semiconductor process modeling Tunneling |
| title | A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs |
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