Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substrates

Biaxial tensile strained substrates offer strong electron mobility enhancements resulting in large drive current gains. For short channel n-MOSFETs, however, these improvements diminish. Root causes for this performance degradation are investigated through experiments and simulations. Elastic stress...

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Bibliographische Detailangaben

Hauptverfasser:	Flachowsky, S., Hontschel, J., Wei, A., Illgen, R., Hermann, P., Herrmann, T., Klix, W., Stenzel, R., Ramirez, A., Horstmann, M., Kernevez, N., Cayrefourcq, I., Metral, F., Kennard, M., Guiot, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Degradation Electron mobility MOSFET circuits Region 1 Scalability Silicon on insulator technology Strain measurement Surface resistance Tensile strain Tensile stress
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