Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse t...

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Veröffentlicht in:IEEE journal of quantum electronics 1996-04, Vol.32 (4), p.664-669
Hauptverfasser: Tatum, J.A., MacFarlane, D.L., Bowen, R.C., Klimeck, G., Frensley, W.R.
Format: Artikel
Sprache:eng
Schlagworte:
Differential amplifiers
Diode lasers
Energy measurement
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain measurement
Laser optical systems: design and operation
Optical amplifiers
Optical pulses
Optics
Physics
Pulse amplifiers
Pulse generation
Pulse measurements
Resonators, cavities, amplifiers, arrays, and rings
Semiconductor optical amplifiers
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Beschreibung
Zusammenfassung:We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse traveling through the amplifier. We also measure the ultrafast gain dynamics using a pump and probe technique. We find the ultrafast gain recovery time due to carrier heating is 400 fs/spl plusmn/30 fs. Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.488841