Single event upsets in gallium arsenide pseudo-complementary MESFET logic

An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs P...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1995-12, Vol.42 (6), p.1829-1836
Hauptverfasser:	Fouts, D.J., Weatherford, T.R., McMorrow, D., Wolfe, K., Van Dyk, S.E., Melinger, J.S., Tran, L.H., Campbell, A.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit synthesis Circuit testing DATA ANALYSIS EXPERIMENTAL DATA FETs FIELD EFFECT TRANSISTORS Gallium arsenide INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Integrated circuit testing INTEGRATED CIRCUITS LOGIC CIRCUITS Logic design MESFET circuits PHYSICAL RADIATION EFFECTS Single event transient Single event upset SPACE FLIGHT
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!