A new type of local defects in very thin silicon dioxide films on arsenic-implanted p-type silicon

Local oxide defects in thin silicon dioxide films thermally grown on arsenic-implanted n/sup +/ layer on a p-type Si substrate as well as on a plain p-type substrate were studied with the EBIC/TCM (Electron Beam Induced Current/Tunneling Current Microscopy) technique. We have captured the EBIC micro...

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Bibliographische Detailangaben

Hauptverfasser:	Lau, W.S., Pey, K.S., Ng, W.T., Sane, V., Heng, J.M.C., Phang, J.C.H., Chan, D.S.H., Chua, C.M., Cronquist, B., Lee, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electron beams Failure analysis Oxidation Reliability engineering Scanning electron microscopy Semiconductor device manufacture Semiconductor films Silicon compounds Substrates Voltage
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