Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model

Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic...

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Hauptverfasser:	Martin, G.H., Seaford, M.L., Spencer, R., Braunstein, J., Eastman, L.F.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Gallium arsenide HEMTs Impurities Indium phosphide Lattices MODFETs Photonic band gap Sheet materials Substrates
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creator	Martin, G.H. Seaford, M.L. Spencer, R. Braunstein, J. Eastman, L.F.
description	Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.
doi_str_mv	10.1109/CORNEL.1995.482428
format	Conference Proceeding
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ispartof	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, p.132-140
issn	1079-4700
language	eng
recordid	cdi_ieee_primary_482428
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Analytical models Gallium arsenide HEMTs Impurities Indium phosphide Lattices MODFETs Photonic band gap Sheet materials Substrates
title	Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
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