Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Heterojunction bipolar transistors (HBT's) with 2700 μm 2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficie...

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Veröffentlicht in:IEEE microwave and guided wave letters 1996-01, Vol.6 (1), p.31-33
Hauptverfasser: Deshours, F., Bergeault, E., Berghoff, G., Pinatel, C., Dubon-Chevallier, C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Attenuators
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Energy efficiency
Exact sciences and technology
Heterojunction bipolar transistors
Impedance measurement
Low pass filters
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave measurements
Performance evaluation
Power amplifiers
Power generation
Power measurement
Power system modeling
Q1
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Beschreibung
Zusammenfassung:Heterojunction bipolar transistors (HBT's) with 2700 μm 2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.482062