Characterization and modeling of mechanical stress in silicon-based devices

In this paper we show a self-consistent methodology to characterize the stress-induced mobility variation in silicon-based devices. The synergy among different experimental techniques (the application of an external mechanical stress and the measure of the process-induced stress), theoretical calcul...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Spessot, A., Colombi, A., Carnevale, G.P., Fantini, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitive sensors Elasticity Finite element methods Mechanical variables measurement Particle measurements Pressure control Silicon Stress measurement Tensile stress Testing
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