Voltage-Driven On-Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

The transition from the on (low-resistance) to the off (high-resistance) state is studied for programmable metallization cell nonvolatile memories. The stability of the on state under stress voltage and the erase operation were characterized as a function of the initial resistance in the timescale f...

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Veröffentlicht in:	IEEE electron device letters 2009-05, Vol.30 (5), p.553-555
Hauptverfasser:	Kamalanathan, D., Russo, U., Ielmini, D., Kozicki, M.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Conductive bridging RAM (CBRAM) Design. Technologies. Operation analysis. Testing Electrodes Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) ionic conduction Metallization Microelectronic fabrication (materials and surfaces technology) Nanoelectronics Nonvolatile memory on -state stability programmable metallization cell (PMC) Read-write memory reliability modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solids Stability Stress Temperature Voltage
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