The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides
The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing a...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 155 |
|---|---|
| container_issue | |
| container_start_page | 152 |
| container_title | |
| container_volume | |
| creator | Logan, D.F. Jessop, P.E. Knights, A.P. Gwilliam, R.M. Halsall, M.P. |
| description | The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm -1 , while the intrinsic loss of the waveguides is limited to 2 dBcm -1 . These results have significant ramifications for a number of integrated optical devices fabricated in silicon. |
| doi_str_mv | 10.1109/COMMAD.2008.4802114 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4802114</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4802114</ieee_id><sourcerecordid>4802114</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-779e318aad704900d8326e337e993bbb2e37a78547cc57b4ad0c01ef3802f6893</originalsourceid><addsrcrecordid>eNpVkMtuwjAURN2XVEr5Ajb-gVC_wnWWiD4lEBu6Ro59Q10FJ4oNFR_Q_24o3VQaaXRnrs5iCBlzNuGcFQ_z1XI5e5wIxvREaSY4VxdkVIDmSiglgIO-JAMhAbI8Z_nVv27Kr8mgp0AmuIRbchfjJ2OCSaUH5Hv9gRSrCm2iTUVd0_qwpenYIjXBUdsEiyF1Jvkm0JPa5K2pqSlj07W_6cEb6ndtbUI6v_ng9hYddXjCxv6m0de-Z2W9fIj72qSmo1_mgNu9dxjvyU1l6oijPx-S9-en9fw1W6xe3uazReY55CkDKFBybYwDpgrGnJZiilICFoUsy1KgBAM6V2BtDqUyjlnGsZL9ZNVUF3JIxmeuR8RN2_md6Y6bv0XlD2sVaLM</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Logan, D.F. ; Jessop, P.E. ; Knights, A.P. ; Gwilliam, R.M. ; Halsall, M.P.</creator><creatorcontrib>Logan, D.F. ; Jessop, P.E. ; Knights, A.P. ; Gwilliam, R.M. ; Halsall, M.P.</creatorcontrib><description>The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm -1 , while the intrinsic loss of the waveguides is limited to 2 dBcm -1 . These results have significant ramifications for a number of integrated optical devices fabricated in silicon.</description><identifier>ISSN: 1097-2137</identifier><identifier>ISBN: 9781424427161</identifier><identifier>ISBN: 1424427169</identifier><identifier>EISSN: 2377-5505</identifier><identifier>EISBN: 9781424427178</identifier><identifier>EISBN: 1424427177</identifier><identifier>DOI: 10.1109/COMMAD.2008.4802114</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Annealing ; Boron ; Doping ; integrated optics ; Ion implantation ; Optical devices ; Optical losses ; Optical waveguides ; Particle beam optics ; silicon ; Silicon on insulator technology ; waveguides</subject><ispartof>2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, p.152-155</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4802114$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27926,54921</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4802114$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Logan, D.F.</creatorcontrib><creatorcontrib>Jessop, P.E.</creatorcontrib><creatorcontrib>Knights, A.P.</creatorcontrib><creatorcontrib>Gwilliam, R.M.</creatorcontrib><creatorcontrib>Halsall, M.P.</creatorcontrib><title>The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides</title><title>2008 Conference on Optoelectronic and Microelectronic Materials and Devices</title><addtitle>COMMAD</addtitle><description>The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm -1 , while the intrinsic loss of the waveguides is limited to 2 dBcm -1 . These results have significant ramifications for a number of integrated optical devices fabricated in silicon.</description><subject>Absorption</subject><subject>Annealing</subject><subject>Boron</subject><subject>Doping</subject><subject>integrated optics</subject><subject>Ion implantation</subject><subject>Optical devices</subject><subject>Optical losses</subject><subject>Optical waveguides</subject><subject>Particle beam optics</subject><subject>silicon</subject><subject>Silicon on insulator technology</subject><subject>waveguides</subject><issn>1097-2137</issn><issn>2377-5505</issn><isbn>9781424427161</isbn><isbn>1424427169</isbn><isbn>9781424427178</isbn><isbn>1424427177</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkMtuwjAURN2XVEr5Ajb-gVC_wnWWiD4lEBu6Ro59Q10FJ4oNFR_Q_24o3VQaaXRnrs5iCBlzNuGcFQ_z1XI5e5wIxvREaSY4VxdkVIDmSiglgIO-JAMhAbI8Z_nVv27Kr8mgp0AmuIRbchfjJ2OCSaUH5Hv9gRSrCm2iTUVd0_qwpenYIjXBUdsEiyF1Jvkm0JPa5K2pqSlj07W_6cEb6ndtbUI6v_ng9hYddXjCxv6m0de-Z2W9fIj72qSmo1_mgNu9dxjvyU1l6oijPx-S9-en9fw1W6xe3uazReY55CkDKFBybYwDpgrGnJZiilICFoUsy1KgBAM6V2BtDqUyjlnGsZL9ZNVUF3JIxmeuR8RN2_md6Y6bv0XlD2sVaLM</recordid><startdate>200807</startdate><enddate>200807</enddate><creator>Logan, D.F.</creator><creator>Jessop, P.E.</creator><creator>Knights, A.P.</creator><creator>Gwilliam, R.M.</creator><creator>Halsall, M.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200807</creationdate><title>The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides</title><author>Logan, D.F. ; Jessop, P.E. ; Knights, A.P. ; Gwilliam, R.M. ; Halsall, M.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-779e318aad704900d8326e337e993bbb2e37a78547cc57b4ad0c01ef3802f6893</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Absorption</topic><topic>Annealing</topic><topic>Boron</topic><topic>Doping</topic><topic>integrated optics</topic><topic>Ion implantation</topic><topic>Optical devices</topic><topic>Optical losses</topic><topic>Optical waveguides</topic><topic>Particle beam optics</topic><topic>silicon</topic><topic>Silicon on insulator technology</topic><topic>waveguides</topic><toplevel>online_resources</toplevel><creatorcontrib>Logan, D.F.</creatorcontrib><creatorcontrib>Jessop, P.E.</creatorcontrib><creatorcontrib>Knights, A.P.</creatorcontrib><creatorcontrib>Gwilliam, R.M.</creatorcontrib><creatorcontrib>Halsall, M.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Logan, D.F.</au><au>Jessop, P.E.</au><au>Knights, A.P.</au><au>Gwilliam, R.M.</au><au>Halsall, M.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides</atitle><btitle>2008 Conference on Optoelectronic and Microelectronic Materials and Devices</btitle><stitle>COMMAD</stitle><date>2008-07</date><risdate>2008</risdate><spage>152</spage><epage>155</epage><pages>152-155</pages><issn>1097-2137</issn><eissn>2377-5505</eissn><isbn>9781424427161</isbn><isbn>1424427169</isbn><eisbn>9781424427178</eisbn><eisbn>1424427177</eisbn><abstract>The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm -1 , while the intrinsic loss of the waveguides is limited to 2 dBcm -1 . These results have significant ramifications for a number of integrated optical devices fabricated in silicon.</abstract><pub>IEEE</pub><doi>10.1109/COMMAD.2008.4802114</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1097-2137 |
| ispartof | 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, p.152-155 |
| issn | 1097-2137 2377-5505 |
| language | eng |
| recordid | cdi_ieee_primary_4802114 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Annealing Boron Doping integrated optics Ion implantation Optical devices Optical losses Optical waveguides Particle beam optics silicon Silicon on insulator technology waveguides |
| title | The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T15%3A02%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20effect%20of%20doping%20type%20and%20concentration%20on%20optical%20absorption%20via%20implantation%20induced%20defects%20in%20silicon-on-insulator%20waveguides&rft.btitle=2008%20Conference%20on%20Optoelectronic%20and%20Microelectronic%20Materials%20and%20Devices&rft.au=Logan,%20D.F.&rft.date=2008-07&rft.spage=152&rft.epage=155&rft.pages=152-155&rft.issn=1097-2137&rft.eissn=2377-5505&rft.isbn=9781424427161&rft.isbn_list=1424427169&rft_id=info:doi/10.1109/COMMAD.2008.4802114&rft_dat=%3Cieee_6IE%3E4802114%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424427178&rft.eisbn_list=1424427177&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4802114&rfr_iscdi=true |