0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature

0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature

Room temperature 1.6 mum p + -Si/beta-FeSi 2 /n + -Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi 2 active layer and by embedding the beta-FeSi 2...

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Bibliographische Detailangaben
Hauptverfasser: Suzuno, M., Murase, S., Koizumi, T., Suemasu, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
DH-HEMTs
Iron
Light emitting diodes
Molecular beam epitaxial growth
Optical diffraction
Optical films
Optical sensors
Stimulated emission
Substrates
X-ray diffraction
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Beschreibung
Zusammenfassung:Room temperature 1.6 mum p + -Si/beta-FeSi 2 /n + -Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi 2 active layer and by embedding the beta-FeSi 2 at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency for the first time using optical power meter.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2008.4800852