Improvement of the k.p Approach for Describing Silicon Quantum Dots

We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the...

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Bibliographische Detailangaben

Hauptverfasser:	Rodriguez-Bolivar, S., Gomez-Campos, F.M., Luque-Rodriguez, A., Lopez-Villanueva, J.A., Jimenez-Tejada, J.A., Lara-Bullejos, P., Carceller, J.E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic measurements Computational efficiency Computational modeling Effective mass Electron devices Kinetic energy Potential well Quantum computing Quantum dots Silicon
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