High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes
We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm 2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The d...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of quantum electronics 2009-03, Vol.45 (3), p.300-303 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 303 |
|---|---|
| container_issue | 3 |
| container_start_page | 300 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 45 |
| creator | Xiaogang Bai Han-Din Liu McIntosh, D.C. Campbell, J.C. |
| description | We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm 2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10 14 Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10 14 cmHz 1/2 W -1 , has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10 -4 is reported. |
| doi_str_mv | 10.1109/JQE.2009.2013093 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4799257</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4799257</ieee_id><sourcerecordid>2295852211</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-fdd13e9a5b0b163bd9545732471129936261f0a2fc18377533e228a5fe1bd2f73</originalsourceid><addsrcrecordid>eNqF0T1PwzAQBmALgUT52JFYIgaYUny-OLZHVAoFIQECBiYrTc7UqCQQp5X67zFtYWCAxV967mT7ZewAeB-Am9Pr-2FfcG7iAMgNbrAeSKlTUICbrMc56NSAUdtsJ4TXuM0yzXvseeRfJuk5dVR2fu67RVLUVbI8fPD1y5TSu0nTNfU3iauhc770VJeLJBtFNUjO5sW0qMsJJUtc-aaisMe2XDENtL-ed9nTxfBxMEpvbi-vBmc3aYkautRVFSCZQo75GHIcV0ZmUqHIFIAwBnORg-OFcCVoVEoikhC6kI5gXAmncJedrPq-t83HjEJn33woaRpvRM0sWMNjD5Q8_1fq3GgJHCDK4z8lZhkYXMKjX_C1mbV1fK_VUuWoc44R8RUq2yaElpx9b_1b0S4scPsVno3h2a_w7Dq8WHK4KvFE9MMzZYyIn_MJPnKSrA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>857638603</pqid></control><display><type>article</type><title>High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes</title><source>IEEE Electronic Library (IEL)</source><creator>Xiaogang Bai ; Han-Din Liu ; McIntosh, D.C. ; Campbell, J.C.</creator><creatorcontrib>Xiaogang Bai ; Han-Din Liu ; McIntosh, D.C. ; Campbell, J.C.</creatorcontrib><description>We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm 2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10 14 Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10 14 cmHz 1/2 W -1 , has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10 -4 is reported.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2009.2013093</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche photodiodes ; Avalanche photodiodes (APDs) ; Avalanches ; Chemicals ; Dark current ; Density ; Detectors ; Etching ; Gain ; High gain ; Immune system ; Lithography ; photodetector ; Photodetectors ; Photodiodes ; Quantum efficiency ; Silicon carbide ; Temperature ; ultraviolet (UV) detector ; Unity</subject><ispartof>IEEE journal of quantum electronics, 2009-03, Vol.45 (3), p.300-303</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-fdd13e9a5b0b163bd9545732471129936261f0a2fc18377533e228a5fe1bd2f73</citedby><cites>FETCH-LOGICAL-c381t-fdd13e9a5b0b163bd9545732471129936261f0a2fc18377533e228a5fe1bd2f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4799257$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4799257$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xiaogang Bai</creatorcontrib><creatorcontrib>Han-Din Liu</creatorcontrib><creatorcontrib>McIntosh, D.C.</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><title>High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm 2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10 14 Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10 14 cmHz 1/2 W -1 , has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10 -4 is reported.</description><subject>Avalanche photodiodes</subject><subject>Avalanche photodiodes (APDs)</subject><subject>Avalanches</subject><subject>Chemicals</subject><subject>Dark current</subject><subject>Density</subject><subject>Detectors</subject><subject>Etching</subject><subject>Gain</subject><subject>High gain</subject><subject>Immune system</subject><subject>Lithography</subject><subject>photodetector</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Quantum efficiency</subject><subject>Silicon carbide</subject><subject>Temperature</subject><subject>ultraviolet (UV) detector</subject><subject>Unity</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0T1PwzAQBmALgUT52JFYIgaYUny-OLZHVAoFIQECBiYrTc7UqCQQp5X67zFtYWCAxV967mT7ZewAeB-Am9Pr-2FfcG7iAMgNbrAeSKlTUICbrMc56NSAUdtsJ4TXuM0yzXvseeRfJuk5dVR2fu67RVLUVbI8fPD1y5TSu0nTNfU3iauhc770VJeLJBtFNUjO5sW0qMsJJUtc-aaisMe2XDENtL-ed9nTxfBxMEpvbi-vBmc3aYkautRVFSCZQo75GHIcV0ZmUqHIFIAwBnORg-OFcCVoVEoikhC6kI5gXAmncJedrPq-t83HjEJn33woaRpvRM0sWMNjD5Q8_1fq3GgJHCDK4z8lZhkYXMKjX_C1mbV1fK_VUuWoc44R8RUq2yaElpx9b_1b0S4scPsVno3h2a_w7Dq8WHK4KvFE9MMzZYyIn_MJPnKSrA</recordid><startdate>20090301</startdate><enddate>20090301</enddate><creator>Xiaogang Bai</creator><creator>Han-Din Liu</creator><creator>McIntosh, D.C.</creator><creator>Campbell, J.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090301</creationdate><title>High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes</title><author>Xiaogang Bai ; Han-Din Liu ; McIntosh, D.C. ; Campbell, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-fdd13e9a5b0b163bd9545732471129936261f0a2fc18377533e228a5fe1bd2f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Avalanche photodiodes</topic><topic>Avalanche photodiodes (APDs)</topic><topic>Avalanches</topic><topic>Chemicals</topic><topic>Dark current</topic><topic>Density</topic><topic>Detectors</topic><topic>Etching</topic><topic>Gain</topic><topic>High gain</topic><topic>Immune system</topic><topic>Lithography</topic><topic>photodetector</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Quantum efficiency</topic><topic>Silicon carbide</topic><topic>Temperature</topic><topic>ultraviolet (UV) detector</topic><topic>Unity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xiaogang Bai</creatorcontrib><creatorcontrib>Han-Din Liu</creatorcontrib><creatorcontrib>McIntosh, D.C.</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiaogang Bai</au><au>Han-Din Liu</au><au>McIntosh, D.C.</au><au>Campbell, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2009-03-01</date><risdate>2009</risdate><volume>45</volume><issue>3</issue><spage>300</spage><epage>303</epage><pages>300-303</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm 2 at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10 14 Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10 14 cmHz 1/2 W -1 , has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10 -4 is reported.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JQE.2009.2013093</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 2009-03, Vol.45 (3), p.300-303 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_ieee_primary_4799257 |
| source | IEEE Electronic Library (IEL) |
| subjects | Avalanche photodiodes Avalanche photodiodes (APDs) Avalanches Chemicals Dark current Density Detectors Etching Gain High gain Immune system Lithography photodetector Photodetectors Photodiodes Quantum efficiency Silicon carbide Temperature ultraviolet (UV) detector Unity |
| title | High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T16%3A06%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Detectivity%20and%20High-Single-Photon-Detection-Efficiency%204H-SiC%20Avalanche%20Photodiodes&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Xiaogang%20Bai&rft.date=2009-03-01&rft.volume=45&rft.issue=3&rft.spage=300&rft.epage=303&rft.pages=300-303&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2009.2013093&rft_dat=%3Cproquest_RIE%3E2295852211%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=857638603&rft_id=info:pmid/&rft_ieee_id=4799257&rfr_iscdi=true |