0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

We demonstrate for the first time record low Leakage-EOT (3.5 times 10 -7 A/cm 2 at 1V, EOT=0.49 nm) MIM capacitors fabricated using a low temperature (250degC) ALD SrTiO 3 (STO) deposition process on ALD TiN bottom electrode. While most previous work on STO used deposition techniques not compatible...

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Bibliographische Detailangaben

Hauptverfasser:	Menou, N., Wang, X.P., Kaczer, B., Polspoel, W., Popovici, M., Opsomer, K., Pawlak, M.A., Knaepen, W., Detavernier, C., Blomberg, T., Pierreux, D., Swerts, J., Maes, J.W., Favia, P., Bender, H., Brijs, B., Vandervorst, W., Van Elshocht, S., Wouters, D.J., Biesemans, S., Kittl, J.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atomic layer deposition Crystallization Electrodes MIM capacitors Random access memory Strontium Temperature Tin Water
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