Scaling trends for random telegraph noise in deca-nanometer Flash memories
We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD s...
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| creator | Ghetti, A. Compagnoni, C.M. Biancardi, F. Lacaita, A.L. Beltrami, S. Chiavarone, L. Spinelli, A.S. Visconti, A. |
| description | We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation flash technologies. |
| doi_str_mv | 10.1109/IEDM.2008.4796827 |
| format | Conference Proceeding |
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The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. 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All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation flash technologies.</description><subject>Computational modeling</subject><subject>Distributed computing</subject><subject>Doping</subject><subject>Flash memory</subject><subject>Noise generators</subject><subject>Noise level</subject><subject>Nonvolatile memory</subject><subject>Semiconductor process modeling</subject><subject>Statistical distributions</subject><subject>Telegraphy</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>9781424423774</isbn><isbn>1424423775</isbn><isbn>9781424423781</isbn><isbn>1424423783</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkLtOwzAYRs1NIpQ-AGLxCzj4Fl9GVFooKmIAJLbKsf-0RolT2Vl4e5DowvQd6Uhn-BC6YbRmjNq79fLhpeaUmlpqqwzXJ2hutWGSS8nFL5yiirNGEcr059k_p-U5qihTgjDLzCW6KuWLUq4b21To-c27PqYdnjKkUHA3ZpxdCuOAJ-hhl91hj9MYC-CYcADvSHJpHGCCjFe9K3s8wDDmCOUaXXSuLzA_7gx9rJbviyeyeX1cL-43xDNhJgJSKWEaa4IxzlPvmeYheG3bttVCeiFFRzswoeWSGcuVoq3TWgXauOCgEzN0-9eNALA95Di4_L093iJ-AOMDUmU</recordid><startdate>200812</startdate><enddate>200812</enddate><creator>Ghetti, A.</creator><creator>Compagnoni, C.M.</creator><creator>Biancardi, F.</creator><creator>Lacaita, A.L.</creator><creator>Beltrami, S.</creator><creator>Chiavarone, L.</creator><creator>Spinelli, A.S.</creator><creator>Visconti, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200812</creationdate><title>Scaling trends for random telegraph noise in deca-nanometer Flash memories</title><author>Ghetti, A. ; Compagnoni, C.M. ; Biancardi, F. ; Lacaita, A.L. ; Beltrami, S. ; Chiavarone, L. ; Spinelli, A.S. ; Visconti, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c138t-e46638598d88ac0cc172ddc79bbb734c343f0fe8db241892660ba776d05adaef3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Computational modeling</topic><topic>Distributed computing</topic><topic>Doping</topic><topic>Flash memory</topic><topic>Noise generators</topic><topic>Noise level</topic><topic>Nonvolatile memory</topic><topic>Semiconductor process modeling</topic><topic>Statistical distributions</topic><topic>Telegraphy</topic><toplevel>online_resources</toplevel><creatorcontrib>Ghetti, A.</creatorcontrib><creatorcontrib>Compagnoni, C.M.</creatorcontrib><creatorcontrib>Biancardi, F.</creatorcontrib><creatorcontrib>Lacaita, A.L.</creatorcontrib><creatorcontrib>Beltrami, S.</creatorcontrib><creatorcontrib>Chiavarone, L.</creatorcontrib><creatorcontrib>Spinelli, A.S.</creatorcontrib><creatorcontrib>Visconti, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ghetti, A.</au><au>Compagnoni, C.M.</au><au>Biancardi, F.</au><au>Lacaita, A.L.</au><au>Beltrami, S.</au><au>Chiavarone, L.</au><au>Spinelli, A.S.</au><au>Visconti, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Scaling trends for random telegraph noise in deca-nanometer Flash memories</atitle><btitle>2008 IEEE International Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>2008-12</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>9781424423774</isbn><isbn>1424423775</isbn><eisbn>9781424423781</eisbn><eisbn>1424423783</eisbn><abstract>We present a thorough investigation of the random telegraph noise scaling trend for both NAND and NOR floating-gate flash memories, including experimental and physics-based modeling results. The statistical distribution of the random telegraph noise amplitude is computed using conventional 3D TCAD simulations, establishing a direct connection with cell parameters. The analysis results in a simple formula for the random telegraph noise amplitude standard deviation as a function of cell width, length, substrate doping, tunnel oxide thickness and drain bias. All the simulation results are in good agreement with experimental data and are of utmost importance to understand the random telegraph noise instability and to control it in the development of next generation flash technologies.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2008.4796827</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0163-1918 |
| ispartof | 2008 IEEE International Electron Devices Meeting, 2008, p.1-4 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Computational modeling Distributed computing Doping Flash memory Noise generators Noise level Nonvolatile memory Semiconductor process modeling Statistical distributions Telegraphy |
| title | Scaling trends for random telegraph noise in deca-nanometer Flash memories |
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