Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers

Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers

An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a s...

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Hauptverfasser: Gutta, V., Fattorini, A., Parker, A.E., Harvey, J.T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Current-voltage characteristics
Diodes
Filtering
Gallium arsenide
Geometry
HEMTs
Local oscillators
Mixers
MODFETs
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creator Gutta, V.
Fattorini, A.
Parker, A.E.
Harvey, J.T.
description An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.
doi_str_mv 10.1109/EMICC.2008.4772310
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4772310</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4772310</ieee_id><sourcerecordid>4772310</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-326e55b7c7fc71f926deb1bc8e5950d5fa859b8a2d69b886fd0019caf44e86f83</originalsourceid><addsrcrecordid>eNotj9FKwzAYRgMiKLMvoDd5gdY_adMkl1rnNuiYoF6PNP3jom0z0g7c22_irg7fzeE7hNwzyBgD_Thfr6oq4wAqK6TkOYMrkmipuJKFkgCS3ZBkHL8BgOlSgipvyduq3xs70eDoiw8t0gWGHqd4pGGgdbCmo5vR-q4zU4j0OaL5mXYxHL521A_0_dCkSxP7MHhL1_4X43hHrp3pRkwunJHP1_lHtUzrzWJVPdWpZ1JMac5LFKKRVjormdO8bLFhjVUotIBWOKOEbpThbXmGKl37d9oaVxR4XiqfkYd_r0fE7T763sTj9tKdnwD7Hk5O</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Gutta, V. ; Fattorini, A. ; Parker, A.E. ; Harvey, J.T.</creator><creatorcontrib>Gutta, V. ; Fattorini, A. ; Parker, A.E. ; Harvey, J.T.</creatorcontrib><description>An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.</description><identifier>ISBN: 9782874870071</identifier><identifier>ISBN: 2874870072</identifier><identifier>DOI: 10.1109/EMICC.2008.4772310</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Current-voltage characteristics ; Diodes ; Filtering ; Gallium arsenide ; Geometry ; HEMTs ; Local oscillators ; Mixers ; MODFETs</subject><ispartof>2008 European Microwave Integrated Circuit Conference, 2008, p.386-389</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4772310$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4772310$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gutta, V.</creatorcontrib><creatorcontrib>Fattorini, A.</creatorcontrib><creatorcontrib>Parker, A.E.</creatorcontrib><creatorcontrib>Harvey, J.T.</creatorcontrib><title>Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers</title><title>2008 European Microwave Integrated Circuit Conference</title><addtitle>EMICC</addtitle><description>An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.</description><subject>Circuits</subject><subject>Current-voltage characteristics</subject><subject>Diodes</subject><subject>Filtering</subject><subject>Gallium arsenide</subject><subject>Geometry</subject><subject>HEMTs</subject><subject>Local oscillators</subject><subject>Mixers</subject><subject>MODFETs</subject><isbn>9782874870071</isbn><isbn>2874870072</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9FKwzAYRgMiKLMvoDd5gdY_adMkl1rnNuiYoF6PNP3jom0z0g7c22_irg7fzeE7hNwzyBgD_Thfr6oq4wAqK6TkOYMrkmipuJKFkgCS3ZBkHL8BgOlSgipvyduq3xs70eDoiw8t0gWGHqd4pGGgdbCmo5vR-q4zU4j0OaL5mXYxHL521A_0_dCkSxP7MHhL1_4X43hHrp3pRkwunJHP1_lHtUzrzWJVPdWpZ1JMac5LFKKRVjormdO8bLFhjVUotIBWOKOEbpThbXmGKl37d9oaVxR4XiqfkYd_r0fE7T763sTj9tKdnwD7Hk5O</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Gutta, V.</creator><creator>Fattorini, A.</creator><creator>Parker, A.E.</creator><creator>Harvey, J.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers</title><author>Gutta, V. ; Fattorini, A. ; Parker, A.E. ; Harvey, J.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-326e55b7c7fc71f926deb1bc8e5950d5fa859b8a2d69b886fd0019caf44e86f83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Circuits</topic><topic>Current-voltage characteristics</topic><topic>Diodes</topic><topic>Filtering</topic><topic>Gallium arsenide</topic><topic>Geometry</topic><topic>HEMTs</topic><topic>Local oscillators</topic><topic>Mixers</topic><topic>MODFETs</topic><toplevel>online_resources</toplevel><creatorcontrib>Gutta, V.</creatorcontrib><creatorcontrib>Fattorini, A.</creatorcontrib><creatorcontrib>Parker, A.E.</creatorcontrib><creatorcontrib>Harvey, J.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gutta, V.</au><au>Fattorini, A.</au><au>Parker, A.E.</au><au>Harvey, J.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers</atitle><btitle>2008 European Microwave Integrated Circuit Conference</btitle><stitle>EMICC</stitle><date>2008-10</date><risdate>2008</risdate><spage>386</spage><epage>389</epage><pages>386-389</pages><isbn>9782874870071</isbn><isbn>2874870072</isbn><abstract>An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch gallium arsenide high electron mobility transistor process.</abstract><pub>IEEE</pub><doi>10.1109/EMICC.2008.4772310</doi><tpages>4</tpages></addata></record>
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ispartof 2008 European Microwave Integrated Circuit Conference, 2008, p.386-389
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subjects Circuits
Current-voltage characteristics
Diodes
Filtering
Gallium arsenide
Geometry
HEMTs
Local oscillators
Mixers
MODFETs
title Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T20%3A40%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Impact%20of%20Diode%20Geometry%20on%20Local%20Oscillator%20Breakthrough%20in%20Sub-Harmonic%20Mixers&rft.btitle=2008%20European%20Microwave%20Integrated%20Circuit%20Conference&rft.au=Gutta,%20V.&rft.date=2008-10&rft.spage=386&rft.epage=389&rft.pages=386-389&rft.isbn=9782874870071&rft.isbn_list=2874870072&rft_id=info:doi/10.1109/EMICC.2008.4772310&rft_dat=%3Cieee_6IE%3E4772310%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4772310&rfr_iscdi=true