Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signa...
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creator | di Giacomo, V. Santarelli, A. Raffo, A. Traverso, P.A. Schreurs, D. Lonac, J. Resca, D. Vannini, G. Filicori, F. Pagani, M. |
description | A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA. |
doi_str_mv | 10.1109/EMICC.2008.4772287 |
format | Conference Proceeding |
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The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.</description><subject>Accuracy</subject><subject>Convolution</subject><subject>Design engineering</subject><subject>Electron devices</subject><subject>FETs</subject><subject>Frequency estimation</subject><subject>Integrated circuit modeling</subject><subject>Mathematical model</subject><subject>Predictive models</subject><subject>Voltage</subject><isbn>9782874870071</isbn><isbn>2874870072</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FKxDAURQMiKGN_QDf5gdaXpMlLlkPt6MBUN7oe0uZ1iNRW0ir69xac1T1wDxcuY7cCCiHA3dfNvqoKCWCLElFKixcsc2hXKC0CoLhi2Ty_A4BwBsGaa7bbdt1X8gvx52kc4kg-8XqgbknTyB_oO3bEmynQsHYn3k-JV9MQ-K5-5U38obQ6czyNN-yy98NM2Tk37G1Vqqf88PK4r7aHPArUS44lQTDkpJK2NaEVBMq3xmBrtSb0ugtCCCQpXKlUS23Q4HojNAY01nm1YXf_u5GIjp8pfvj0ezy_VX8gJElX</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>di Giacomo, V.</creator><creator>Santarelli, A.</creator><creator>Raffo, A.</creator><creator>Traverso, P.A.</creator><creator>Schreurs, D.</creator><creator>Lonac, J.</creator><creator>Resca, D.</creator><creator>Vannini, G.</creator><creator>Filicori, F.</creator><creator>Pagani, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design</title><author>di Giacomo, V. ; Santarelli, A. ; Raffo, A. ; Traverso, P.A. ; Schreurs, D. ; Lonac, J. ; Resca, D. ; Vannini, G. ; Filicori, F. ; Pagani, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-74e0d6e92328b6db1e03ab667b855e7a5cd1117e219433bebd509f6157d7689a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Accuracy</topic><topic>Convolution</topic><topic>Design engineering</topic><topic>Electron devices</topic><topic>FETs</topic><topic>Frequency estimation</topic><topic>Integrated circuit modeling</topic><topic>Mathematical model</topic><topic>Predictive models</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>di Giacomo, V.</creatorcontrib><creatorcontrib>Santarelli, A.</creatorcontrib><creatorcontrib>Raffo, A.</creatorcontrib><creatorcontrib>Traverso, P.A.</creatorcontrib><creatorcontrib>Schreurs, D.</creatorcontrib><creatorcontrib>Lonac, J.</creatorcontrib><creatorcontrib>Resca, D.</creatorcontrib><creatorcontrib>Vannini, G.</creatorcontrib><creatorcontrib>Filicori, F.</creatorcontrib><creatorcontrib>Pagani, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>di Giacomo, V.</au><au>Santarelli, A.</au><au>Raffo, A.</au><au>Traverso, P.A.</au><au>Schreurs, D.</au><au>Lonac, J.</au><au>Resca, D.</au><au>Vannini, G.</au><au>Filicori, F.</au><au>Pagani, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design</atitle><btitle>2008 European Microwave Integrated Circuit Conference</btitle><stitle>EMICC</stitle><date>2008-10</date><risdate>2008</risdate><spage>294</spage><epage>297</epage><pages>294-297</pages><isbn>9782874870071</isbn><isbn>2874870072</isbn><abstract>A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. 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subjects | Accuracy Convolution Design engineering Electron devices FETs Frequency estimation Integrated circuit modeling Mathematical model Predictive models Voltage |
title | Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design |
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