Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design

A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signa...

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Hauptverfasser: di Giacomo, V., Santarelli, A., Raffo, A., Traverso, P.A., Schreurs, D., Lonac, J., Resca, D., Vannini, G., Filicori, F., Pagani, M.
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creator di Giacomo, V.
Santarelli, A.
Raffo, A.
Traverso, P.A.
Schreurs, D.
Lonac, J.
Resca, D.
Vannini, G.
Filicori, F.
Pagani, M.
description A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
doi_str_mv 10.1109/EMICC.2008.4772287
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subjects Accuracy
Convolution
Design engineering
Electron devices
FETs
Frequency estimation
Integrated circuit modeling
Mathematical model
Predictive models
Voltage
title Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design
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