Characteristics of low-k RF MEMS capacitive switches on gallium arsenide substrate

This paper details the fabrication and performance of a low-k RF MEMS capacitive switch on gallium arsenide (epsiv r =12.9) substrate. The switch is fabricated using GaAs MMIC compatible MEMS specific surface micromachining techniques. The switch posses a movable metallic bridge which pulls down ont...

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Bibliographische Detailangaben

Hauptverfasser:	Sharma, P., Koul, S.K., Murlidharan, R., Mangatayaru, A., Suryanarayanan, P., Chaturvedi, S., Naik, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bridge circuits Dielectric substrates Fabrication Gallium arsenide low spring constant Micromachining Micromechanical devices MMICs Radiofrequency microelectromechanical systems RF MEMS capacitive switch surface micromachining Switches Voltage
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