Modeling aspects of current calculation of 4H-SiC Schottky diode
This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, sta...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 860 |
|---|---|
| container_issue | |
| container_start_page | 857 |
| container_title | |
| container_volume | |
| creator | Khannal, S. Noor, A. Neeleshwar, S. Tyagi, M.S. |
| description | This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the current condition of 4H-SiC Schottky barrier diode. In Schottky diodes current transport takes place by three mechanisms, diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. For these three mechanisms current calculation using drift diffusion model has been done. |
| doi_str_mv | 10.1109/AMTA.2008.4763160 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4763160</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4763160</ieee_id><sourcerecordid>4763160</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-305c1067c7914022c69b990846e739d2afe9996796eb64b08e876dae44e0dc683</originalsourceid><addsrcrecordid>eNo1UMFOwzAUC0KTYKMfgLjkBzpemtek70ZVAUPaxGFD4jal6SsESju13WF_zyaGL5Yt2wcLcatgrhTQfb7a5PMEIJujNVoZuBBThQliYki9X4qIbPavASdiesoSpBbgSkTD8AVHYKpR2WvxsOoqbkL7Id2wYz8Osqul3_c9t6P0rvH7xo2ha082LuJ1KOTaf3bj-H2QVTh2b8Skds3A0Zln4u3pcVMs4uXr80uRL-OgbDrGGlKvwFhvSSEkiTdUEkGGhq2mKnE1E5GxZLg0WELGmTWVY0SGyptMz8Td325g5u2uDz-uP2zPD-hfcqlLBQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Modeling aspects of current calculation of 4H-SiC Schottky diode</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Khannal, S. ; Noor, A. ; Neeleshwar, S. ; Tyagi, M.S.</creator><creatorcontrib>Khannal, S. ; Noor, A. ; Neeleshwar, S. ; Tyagi, M.S.</creatorcontrib><description>This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the current condition of 4H-SiC Schottky barrier diode. In Schottky diodes current transport takes place by three mechanisms, diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. For these three mechanisms current calculation using drift diffusion model has been done.</description><identifier>ISBN: 9781424426904</identifier><identifier>ISBN: 1424426901</identifier><identifier>EISBN: 142442691X</identifier><identifier>EISBN: 9781424426911</identifier><identifier>DOI: 10.1109/AMTA.2008.4763160</identifier><identifier>LCCN: 2008905700</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; drift diffusion model ; Electron mobility ; Poisson equations ; Poisson's equation and quantum mechanical tunneling ; Schottky barriers ; Schottky diode ; Schottky diodes ; Silicon carbide ; Temperature ; Thermal conductivity ; Tunneling ; Wideband</subject><ispartof>2008 International Conference on Recent Advances in Microwave Theory and Applications, 2008, p.857-860</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4763160$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4763160$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Khannal, S.</creatorcontrib><creatorcontrib>Noor, A.</creatorcontrib><creatorcontrib>Neeleshwar, S.</creatorcontrib><creatorcontrib>Tyagi, M.S.</creatorcontrib><title>Modeling aspects of current calculation of 4H-SiC Schottky diode</title><title>2008 International Conference on Recent Advances in Microwave Theory and Applications</title><addtitle>AMTA</addtitle><description>This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the current condition of 4H-SiC Schottky barrier diode. In Schottky diodes current transport takes place by three mechanisms, diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. For these three mechanisms current calculation using drift diffusion model has been done.</description><subject>Charge carrier processes</subject><subject>drift diffusion model</subject><subject>Electron mobility</subject><subject>Poisson equations</subject><subject>Poisson's equation and quantum mechanical tunneling</subject><subject>Schottky barriers</subject><subject>Schottky diode</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Tunneling</subject><subject>Wideband</subject><isbn>9781424426904</isbn><isbn>1424426901</isbn><isbn>142442691X</isbn><isbn>9781424426911</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UMFOwzAUC0KTYKMfgLjkBzpemtek70ZVAUPaxGFD4jal6SsESju13WF_zyaGL5Yt2wcLcatgrhTQfb7a5PMEIJujNVoZuBBThQliYki9X4qIbPavASdiesoSpBbgSkTD8AVHYKpR2WvxsOoqbkL7Id2wYz8Osqul3_c9t6P0rvH7xo2ha082LuJ1KOTaf3bj-H2QVTh2b8Skds3A0Zln4u3pcVMs4uXr80uRL-OgbDrGGlKvwFhvSSEkiTdUEkGGhq2mKnE1E5GxZLg0WELGmTWVY0SGyptMz8Td325g5u2uDz-uP2zPD-hfcqlLBQ</recordid><startdate>200811</startdate><enddate>200811</enddate><creator>Khannal, S.</creator><creator>Noor, A.</creator><creator>Neeleshwar, S.</creator><creator>Tyagi, M.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200811</creationdate><title>Modeling aspects of current calculation of 4H-SiC Schottky diode</title><author>Khannal, S. ; Noor, A. ; Neeleshwar, S. ; Tyagi, M.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-305c1067c7914022c69b990846e739d2afe9996796eb64b08e876dae44e0dc683</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Charge carrier processes</topic><topic>drift diffusion model</topic><topic>Electron mobility</topic><topic>Poisson equations</topic><topic>Poisson's equation and quantum mechanical tunneling</topic><topic>Schottky barriers</topic><topic>Schottky diode</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Tunneling</topic><topic>Wideband</topic><toplevel>online_resources</toplevel><creatorcontrib>Khannal, S.</creatorcontrib><creatorcontrib>Noor, A.</creatorcontrib><creatorcontrib>Neeleshwar, S.</creatorcontrib><creatorcontrib>Tyagi, M.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Khannal, S.</au><au>Noor, A.</au><au>Neeleshwar, S.</au><au>Tyagi, M.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Modeling aspects of current calculation of 4H-SiC Schottky diode</atitle><btitle>2008 International Conference on Recent Advances in Microwave Theory and Applications</btitle><stitle>AMTA</stitle><date>2008-11</date><risdate>2008</risdate><spage>857</spage><epage>860</epage><pages>857-860</pages><isbn>9781424426904</isbn><isbn>1424426901</isbn><eisbn>142442691X</eisbn><eisbn>9781424426911</eisbn><abstract>This paper present modeling aspects for 4H-SiC Schottky diode using drift diffusion model. Drift diffusion model consists of the current continuity equations for electrons and holes, Poissonpsilas equation and the equations for electron and hole currents. Using this model physical surface trait, state of art of device has been extracted to understand the current condition of 4H-SiC Schottky barrier diode. In Schottky diodes current transport takes place by three mechanisms, diffusion of carriers from the semiconductor into the metal, thermionic emission of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. For these three mechanisms current calculation using drift diffusion model has been done.</abstract><pub>IEEE</pub><doi>10.1109/AMTA.2008.4763160</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9781424426904 |
| ispartof | 2008 International Conference on Recent Advances in Microwave Theory and Applications, 2008, p.857-860 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_4763160 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier processes drift diffusion model Electron mobility Poisson equations Poisson's equation and quantum mechanical tunneling Schottky barriers Schottky diode Schottky diodes Silicon carbide Temperature Thermal conductivity Tunneling Wideband |
| title | Modeling aspects of current calculation of 4H-SiC Schottky diode |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T16%3A28%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Modeling%20aspects%20of%20current%20calculation%20of%204H-SiC%20Schottky%20diode&rft.btitle=2008%20International%20Conference%20on%20Recent%20Advances%20in%20Microwave%20Theory%20and%20Applications&rft.au=Khannal,%20S.&rft.date=2008-11&rft.spage=857&rft.epage=860&rft.pages=857-860&rft.isbn=9781424426904&rft.isbn_list=1424426901&rft_id=info:doi/10.1109/AMTA.2008.4763160&rft_dat=%3Cieee_6IE%3E4763160%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=142442691X&rft.eisbn_list=9781424426911&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4763160&rfr_iscdi=true |