Reliability of InP-based HBT IC technology for high-speed, low-power applications

We report on the reliability of an InP-based AlInAs/GaInAs heterojunction bipolar transistor technology which has applications in very high-speed and low power integrated circuits. We have performed extensive accelerated lifetest experiments under different dc bias conditions and different ambient t...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1995-12, Vol.43 (12), p.3048-3054
Hauptverfasser:	Hafizi, M., Stanchina, W.E., Williams, F., Jensen, J.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceleration Heterojunction bipolar transistors High speed integrated circuits Hydrogen Integrated circuit reliability Integrated circuit technology Power integrated circuits Resistors Thin film circuits Thin film transistors
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