Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays

The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma re...

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Veröffentlicht in:	IEEE photonics technology letters 2009-02, Vol.21 (4), p.257-259
Hauptverfasser:	Min-An Tsai, Peichen Yu, Chao, C.L., Chiu, C.H., Kuo, H.C., Lin, S.H., Huang, J.J., Lu, T.C., Wang, S.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beam shaping Chaos Etching Gallium nitride GaN high-aspect-ratio nanorod arrays Light emitting diodes Optical arrays Optical collimators Photonics Rough surfaces Silicon compounds Substrates vertical-injection light-emitting diodes (VI-LEDs)
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