Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays
The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma re...
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| Veröffentlicht in: | IEEE photonics technology letters 2009-02, Vol.21 (4), p.257-259 |
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| container_title | IEEE photonics technology letters |
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| creator | Min-An Tsai Peichen Yu Chao, C.L. Chiu, C.H. Kuo, H.C. Lin, S.H. Huang, J.J. Lu, T.C. Wang, S.C. |
| description | The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorod arrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20deg. |
| doi_str_mv | 10.1109/LPT.2008.2010556 |
| format | Article |
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(IEEE) 2009</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c445t-95798dc229be1a9bd9470ec46cd420ea54210680b2fb6fcea67c3fc707beb5ee3</citedby><cites>FETCH-LOGICAL-c445t-95798dc229be1a9bd9470ec46cd420ea54210680b2fb6fcea67c3fc707beb5ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4738362$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4738362$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Min-An Tsai</creatorcontrib><creatorcontrib>Peichen Yu</creatorcontrib><creatorcontrib>Chao, C.L.</creatorcontrib><creatorcontrib>Chiu, C.H.</creatorcontrib><creatorcontrib>Kuo, H.C.</creatorcontrib><creatorcontrib>Lin, S.H.</creatorcontrib><creatorcontrib>Huang, J.J.</creatorcontrib><creatorcontrib>Lu, T.C.</creatorcontrib><creatorcontrib>Wang, S.C.</creatorcontrib><title>Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. 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The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20deg.</description><subject>Beam shaping</subject><subject>Chaos</subject><subject>Etching</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>high-aspect-ratio nanorod arrays</subject><subject>Light emitting diodes</subject><subject>Optical arrays</subject><subject>Optical collimators</subject><subject>Photonics</subject><subject>Rough surfaces</subject><subject>Silicon compounds</subject><subject>Substrates</subject><subject>vertical-injection light-emitting diodes (VI-LEDs)</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPwzAMhSsEEmNwR-ISce9w2qRtjgPKNmkaCAbXKk3dLdOalqRD2pVfTqZNXJ5t-Xu29ILglsKIUhAP87flKALIvFDgPDkLBlQwGgJN2bnvwfeUxvwyuHJuA0AZj9kg-M3rWiuNRu1JbtbSKGzQ9ESaijyibMjHWnbarEhbk4lchDPjlXyh7bWSWz9uUPW6NWSuV-s-zBvd9wf8WbcVOvKjJZn6TTh2nQfDd-lhspCmtW1FxtbKvbsOLmq5dXhzqsPg8yVfPk3D-etk9jSeh4ox3oeCpyKrVBSJEqkUZSVYCqhYoioWAUrOIgpJBmVUl0mtUCapimuVQlpiyRHjYXB_vNvZ9nuHri827c4a_7LIeJYKwYF6CI6Qsq1zFuuis7qRdl9QKA5BFz7o4hB0cQraW-6OFo2I_zhL4yxOovgPbWd6SA</recordid><startdate>20090215</startdate><enddate>20090215</enddate><creator>Min-An Tsai</creator><creator>Peichen Yu</creator><creator>Chao, C.L.</creator><creator>Chiu, C.H.</creator><creator>Kuo, H.C.</creator><creator>Lin, S.H.</creator><creator>Huang, J.J.</creator><creator>Lu, T.C.</creator><creator>Wang, S.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 1041-1135 |
| ispartof | IEEE photonics technology letters, 2009-02, Vol.21 (4), p.257-259 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Beam shaping Chaos Etching Gallium nitride GaN high-aspect-ratio nanorod arrays Light emitting diodes Optical arrays Optical collimators Photonics Rough surfaces Silicon compounds Substrates vertical-injection light-emitting diodes (VI-LEDs) |
| title | Efficiency Enhancement and Beam Shaping of GaN-InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays |
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