A 3-5 GHz UWB LNA with an active balun in 0.18 μm CMOS process
In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achie...
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| creator | Ha Yong Jung In Yong Hwang Chan Hyeong Park |
| description | In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation. |
| doi_str_mv | 10.1109/ICSICT.2008.4734827 |
| format | Conference Proceeding |
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We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. 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We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation.</description><subject>CMOS process</subject><subject>Gain</subject><subject>Impedance matching</subject><subject>Low-noise amplifiers</subject><subject>Noise figure</subject><subject>Numerical simulation</subject><subject>Power supplies</subject><subject>Resistors</subject><subject>Ultra wideband technology</subject><subject>Voltage</subject><isbn>9781424421855</isbn><isbn>1424421853</isbn><isbn>9781424421862</isbn><isbn>1424421861</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM9Kw0AYxFekoNY8QS_fCyTun2-zuyeJQdtAtIdGPJZNsosrbSxNVOyz-Qw-kxF7cS7DwDD8GEJmjCaMUXNV5KsirxJOqU5QCdRcnZDIKM2QI3KmU376L0s5IRe_dUMZU_yMRH3_QkehFKmW5-Q6AxFLmC8O8Ph0A-VDBh9heAbbgW2G8O6gtpu3DkIHI4OG768t5PfLFez2r43r-0sy8XbTu-joU1Ld3Vb5Ii6X8yLPyjgYOsStowaF1rVRjPGUoUd03tcN5UqM1Fo7YVPZMm-s9LJVKIzjDUtTxWuUVkzJ7G82OOfWu33Y2v3n-niB-AEt1Ejk</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Ha Yong Jung</creator><creator>In Yong Hwang</creator><creator>Chan Hyeong Park</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>A 3-5 GHz UWB LNA with an active balun in 0.18 μm CMOS process</title><author>Ha Yong Jung ; In Yong Hwang ; Chan Hyeong Park</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-de094388b97112614f44effbc027318688e3a65d1f9a5f5d7439e2c16672b45a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CMOS process</topic><topic>Gain</topic><topic>Impedance matching</topic><topic>Low-noise amplifiers</topic><topic>Noise figure</topic><topic>Numerical simulation</topic><topic>Power supplies</topic><topic>Resistors</topic><topic>Ultra wideband technology</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Ha Yong Jung</creatorcontrib><creatorcontrib>In Yong Hwang</creatorcontrib><creatorcontrib>Chan Hyeong Park</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ha Yong Jung</au><au>In Yong Hwang</au><au>Chan Hyeong Park</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 3-5 GHz UWB LNA with an active balun in 0.18 μm CMOS process</atitle><btitle>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</btitle><stitle>ICSICT</stitle><date>2008-10</date><risdate>2008</risdate><spage>1484</spage><epage>1487</epage><pages>1484-1487</pages><isbn>9781424421855</isbn><isbn>1424421853</isbn><eisbn>9781424421862</eisbn><eisbn>1424421861</eisbn><abstract>In this paper, a low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed. We use shunt-feedback resistor structure for wideband input matching and series L-shunt C structure for gain flatness. Numerical simulation based on TSMC 0.18 μm 1 poly-6 metal process shows that the UWB LNA achieves 18 dB gain at 3-5 GHz band and 3 dB noise figure, operates from 1.8 V power supply, and dissipates 2.63 mW without the output buffer of the LNA. We also propose an active balun to reduce chip size and get more gain by operating it as an amplifier. The differential voltage output of the balun is connected to a double-balanced mixer, which circuit has good performance for isolation.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2008.4734827</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process Gain Impedance matching Low-noise amplifiers Noise figure Numerical simulation Power supplies Resistors Ultra wideband technology Voltage |
| title | A 3-5 GHz UWB LNA with an active balun in 0.18 μm CMOS process |
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