Fluorine plasma ion implantation technology: a new dimension in gan device processing
The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significan...
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| description | The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper, a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed DC and RF device characteristics; 3) circuit applications in wireless communication, high temperature electronics and power electronics and; and 4) reliability of fluorine ions in III-nitride semiconductors. |
| doi_str_mv | 10.1109/ICSICT.2008.4734737 |
| format | Conference Proceeding |
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The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper, a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed DC and RF device characteristics; 3) circuit applications in wireless communication, high temperature electronics and power electronics and; and 4) reliability of fluorine ions in III-nitride semiconductors.</description><identifier>ISBN: 9781424421855</identifier><identifier>ISBN: 1424421853</identifier><identifier>EISBN: 9781424421862</identifier><identifier>EISBN: 1424421861</identifier><identifier>DOI: 10.1109/ICSICT.2008.4734737</identifier><identifier>LCCN: 2008901172</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; FETs ; HEMTs ; Heterojunctions ; Integrated circuit technology ; Ion implantation ; Plasma devices ; Plasma immersion ion implantation ; Plasma materials processing ; Plasma temperature</subject><ispartof>2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.1074-1077</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4734737$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4734737$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, K.J.</creatorcontrib><title>Fluorine plasma ion implantation technology: a new dimension in gan device processing</title><title>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</title><addtitle>ICSICT</addtitle><description>The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper, a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed DC and RF device characteristics; 3) circuit applications in wireless communication, high temperature electronics and power electronics and; and 4) reliability of fluorine ions in III-nitride semiconductors.</description><subject>Aluminum gallium nitride</subject><subject>FETs</subject><subject>HEMTs</subject><subject>Heterojunctions</subject><subject>Integrated circuit technology</subject><subject>Ion implantation</subject><subject>Plasma devices</subject><subject>Plasma immersion ion implantation</subject><subject>Plasma materials processing</subject><subject>Plasma temperature</subject><isbn>9781424421855</isbn><isbn>1424421853</isbn><isbn>9781424421862</isbn><isbn>1424421861</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1KAzEcxCNSUGufoJe8wNZ8bhJvslgtFDxYzyWb_LNGdrNlsyp9e7fai8PA8INhDoPQkpIVpcTcbarXTbVbMUL0Sig-WV2ghVGaCiYEo7pkl_9Yyhm6OdUNoVSxK7TI-YNMEpKXWl6jt3X72Q8xAT60NncWxz7h2E2QRjueYAT3nvq2b4732OIE39jHDlL-LSbc2IQ9fEU3LQy9g5xjam7RLNg2w-Kcc7RbP-6q52L78rSpHrZFNGQsZDDMeS-NdkaJwFkA5alz1gRDXS0gaMZdLQNoZsuSKAm1B8FrR0tPAuFztPybjQCwPwyxs8Nxfz6G_wB9BVbJ</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Chen, K.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>Fluorine plasma ion implantation technology: a new dimension in gan device processing</title><author>Chen, K.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-5f92cdd598c974f32fe7d1cca9f91cb4ef823cb5fe82a66075ebde43bc16d0f03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Aluminum gallium nitride</topic><topic>FETs</topic><topic>HEMTs</topic><topic>Heterojunctions</topic><topic>Integrated circuit technology</topic><topic>Ion implantation</topic><topic>Plasma devices</topic><topic>Plasma immersion ion implantation</topic><topic>Plasma materials processing</topic><topic>Plasma temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, K.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, K.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fluorine plasma ion implantation technology: a new dimension in gan device processing</atitle><btitle>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</btitle><stitle>ICSICT</stitle><date>2008-10</date><risdate>2008</risdate><spage>1074</spage><epage>1077</epage><pages>1074-1077</pages><isbn>9781424421855</isbn><isbn>1424421853</isbn><eisbn>9781424421862</eisbn><eisbn>1424421861</eisbn><abstract>The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper, a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed DC and RF device characteristics; 3) circuit applications in wireless communication, high temperature electronics and power electronics and; and 4) reliability of fluorine ions in III-nitride semiconductors.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2008.4734737</doi><tpages>4</tpages></addata></record> |
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| subjects | Aluminum gallium nitride FETs HEMTs Heterojunctions Integrated circuit technology Ion implantation Plasma devices Plasma immersion ion implantation Plasma materials processing Plasma temperature |
| title | Fluorine plasma ion implantation technology: a new dimension in gan device processing |
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