Formation of SnOx nanoparticles at the AIDCN/ITO interface in organic cross-point memory devices
The formation characteristics and the effect on electrical behavior of the nanoparticles caused by the interfacial redox reaction are investigated in single-layer organic memory devices with a structure of Al(aluminium)/2-amino-4,5-dicyanoimidazole (AIDCN)/indium tin oxide (ITO). It is demonstrated...
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| creator | Yun Li Yedan Sun Danfeng Qiu Jianmin Zhu Lijia Pan Lin Pu Yi Shi |
| description | The formation characteristics and the effect on electrical behavior of the nanoparticles caused by the interfacial redox reaction are investigated in single-layer organic memory devices with a structure of Al(aluminium)/2-amino-4,5-dicyanoimidazole (AIDCN)/indium tin oxide (ITO). It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior, where SnOx nanoparticles are spontaneously formed by the chemical reaction between the tin oxide in ITO and the imine in AIDCN molecule. Moreover, an organic cross-point memory device with a metallic mid-layer was fabricated. I-V measurement presented an on-off ratio as high as 10 8 -10 11 . |
| doi_str_mv | 10.1109/ICSICT.2008.4734714 |
| format | Conference Proceeding |
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It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior, where SnOx nanoparticles are spontaneously formed by the chemical reaction between the tin oxide in ITO and the imine in AIDCN molecule. Moreover, an organic cross-point memory device with a metallic mid-layer was fabricated. 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It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior, where SnOx nanoparticles are spontaneously formed by the chemical reaction between the tin oxide in ITO and the imine in AIDCN molecule. Moreover, an organic cross-point memory device with a metallic mid-layer was fabricated. 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It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior, where SnOx nanoparticles are spontaneously formed by the chemical reaction between the tin oxide in ITO and the imine in AIDCN molecule. Moreover, an organic cross-point memory device with a metallic mid-layer was fabricated. I-V measurement presented an on-off ratio as high as 10 8 -10 11 .</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2008.4734714</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum Electric variables measurement Electrodes Glass Indium tin oxide Nanoparticles Organic chemicals Organic materials Solid state circuits Substrates |
| title | Formation of SnOx nanoparticles at the AIDCN/ITO interface in organic cross-point memory devices |
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