Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe 3 Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (130°C), a high quality hybrid structure, i.e., DO 3 -type Fe 3 Si on Ge with an atomically flat...

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Bibliographische Detailangaben

Hauptverfasser:	Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., Matsuyama, K., Narumi, K., Maeda, Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic beams Atomic layer deposition Coercive force Iron Magnetic flux Magnetic properties Molecular beam epitaxial growth Schottky barriers Silicides Temperature
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