Thermal noise performance in recent CMOS technologies

This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-100 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.

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Bibliographische Detailangaben
Hauptverfasser:	Chih-Hung Chen, Bigchoug Hung, Sheng-Yi Huang, Jin-Shyong Jan, Liang, V., Chune-Sin Yeh
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analog integrated circuits Application specific integrated circuits CMOS technology Equations High speed integrated circuits Integrated circuit noise Microelectronics MOSFETs Noise measurement Radio frequency
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Beschreibung
Zusammenfassung:	This paper reviews the measurement and modeling issues of the channel thermal noise in MOSFETs as a result of the aggressive reduction of the channel length into the sub-100 nm regimes. It also shows the noise performance of devices in 65 nm CMOS technology.
DOI:	10.1109/ICSICT.2008.4734584