HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits

The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several...

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Bibliographische Detailangaben

Hauptverfasser:	Mattausch, H.J., Kajiwara, T., Yokomichi, M., Sakuda, T., Oritsuki, Y., Miyake, M., Sadachika, N., Kikuchihara, H., Feldmann, U., Miura-Mattausch, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Application software Cellular networks Circuit simulation Construction industry MOSFET circuits Performance analysis Poisson equations Power MOSFET Surface resistance Voltage
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