HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits

HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits

The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several...

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Hauptverfasser: Mattausch, H.J., Kajiwara, T., Yokomichi, M., Sakuda, T., Oritsuki, Y., Miyake, M., Sadachika, N., Kikuchihara, H., Feldmann, U., Miura-Mattausch, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Application software
Cellular networks
Circuit simulation
Construction industry
MOSFET circuits
Performance analysis
Poisson equations
Power MOSFET
Surface resistance
Voltage
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Beschreibung
Zusammenfassung:The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several 100 V switching capability. Accurate scaling properties for channel and drift-region length as well as channel width are also provided.
DOI:10.1109/ICSICT.2008.4734532