The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias

The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments. Our results show that by applying a forward substrate bias to a MOSFET periodically switched between the nominal bias point and the O...

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Bibliographische Detailangaben

Hauptverfasser:	Zanolla, N., Siprak, D., Tiebout, M., Baumgartner, P., Sangiorgi, E., Fiegna, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	1f noise CMOS technology Dielectrics Frequency Low-frequency noise MOSFET circuits Noise figure Noise reduction Paper technology Telegraphy
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