Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon
A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scallo...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 665 |
|---|---|
| container_issue | |
| container_start_page | 662 |
| container_title | |
| container_volume | |
| creator | Sung-Sik Yun Dae-Hun Jeong Jae-Yong An Minho Jun Jong-Hyun Lee Chang-Han Je Myung-Lae Lee Gunn Hwang Chang-Auk Choi |
| description | A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scalloping which were formed from silicon deep reactive ion etching (DRIE) process. The sidewalls fabricated by the (110) COPI process remarkably became vertical and flat with few nanometer roughness. The micro inclinometer with flat and vertical sensing electrodes was evaluated in terms of capacitance change and detection limit. The capacitance change of the fabricated device is from -0.246 to 0.258 pF for the inclination angle (-90deg to 90deg). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to 0.3 or less resolution for plusmn70deg. |
| doi_str_mv | 10.1109/ICSENS.2008.4716528 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4716528</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4716528</ieee_id><sourcerecordid>4716528</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-cf2aec64a4e5d2432725a2260696d18f2b4a86997bafbc8a70372a26712430763</originalsourceid><addsrcrecordid>eNpFUMtOAjEUra9EQL-ATZe6GGzvdDrt0kxQSYguYE9K547UDFPSVgxbvtwxEl2d5LyScwgZczbhnOmHWbWYvi4mwJiaiJLLAtQZGXIBQkChuDwnA-BSZRpAX_wLTF2SAdc5y1iui2syjPGDMWB9fECOldkZ65LbI906Gzx1nW1d57eYMNAvlzY0WtO2fue696wJiNR0NW28T3_EHkNyvYliizYFX2Okn7GXqQ2HmPq065Bispsfzjf0rt9zT6NrnfXdDblqTBvx9oQjsnyaLquXbP72PKse55nTLGW2AYNWCiOwqEHkUEJhACSTWtZcNbAWRkmty7Vp1laZkuUlGJAl782slPmIjH9rHSKudsFtTTisTj_m38quZQk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Sung-Sik Yun ; Dae-Hun Jeong ; Jae-Yong An ; Minho Jun ; Jong-Hyun Lee ; Chang-Han Je ; Myung-Lae Lee ; Gunn Hwang ; Chang-Auk Choi</creator><creatorcontrib>Sung-Sik Yun ; Dae-Hun Jeong ; Jae-Yong An ; Minho Jun ; Jong-Hyun Lee ; Chang-Han Je ; Myung-Lae Lee ; Gunn Hwang ; Chang-Auk Choi</creatorcontrib><description>A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scalloping which were formed from silicon deep reactive ion etching (DRIE) process. The sidewalls fabricated by the (110) COPI process remarkably became vertical and flat with few nanometer roughness. The micro inclinometer with flat and vertical sensing electrodes was evaluated in terms of capacitance change and detection limit. The capacitance change of the fabricated device is from -0.246 to 0.258 pF for the inclination angle (-90deg to 90deg). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to 0.3 or less resolution for plusmn70deg.</description><identifier>ISSN: 1930-0395</identifier><identifier>ISBN: 1424425808</identifier><identifier>ISBN: 9781424425808</identifier><identifier>EISSN: 2168-9229</identifier><identifier>EISBN: 1424425816</identifier><identifier>EISBN: 9781424425815</identifier><identifier>DOI: 10.1109/ICSENS.2008.4716528</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitive sensors ; Crystallization ; Electrodes ; Gravity ; Mechatronics ; Optical devices ; Silicon ; Surface morphology ; Wet etching</subject><ispartof>2008 IEEE Sensors, 2008, p.662-665</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4716528$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4716528$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sung-Sik Yun</creatorcontrib><creatorcontrib>Dae-Hun Jeong</creatorcontrib><creatorcontrib>Jae-Yong An</creatorcontrib><creatorcontrib>Minho Jun</creatorcontrib><creatorcontrib>Jong-Hyun Lee</creatorcontrib><creatorcontrib>Chang-Han Je</creatorcontrib><creatorcontrib>Myung-Lae Lee</creatorcontrib><creatorcontrib>Gunn Hwang</creatorcontrib><creatorcontrib>Chang-Auk Choi</creatorcontrib><title>Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon</title><title>2008 IEEE Sensors</title><addtitle>ICSENS</addtitle><description>A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scalloping which were formed from silicon deep reactive ion etching (DRIE) process. The sidewalls fabricated by the (110) COPI process remarkably became vertical and flat with few nanometer roughness. The micro inclinometer with flat and vertical sensing electrodes was evaluated in terms of capacitance change and detection limit. The capacitance change of the fabricated device is from -0.246 to 0.258 pF for the inclination angle (-90deg to 90deg). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to 0.3 or less resolution for plusmn70deg.</description><subject>Capacitance</subject><subject>Capacitive sensors</subject><subject>Crystallization</subject><subject>Electrodes</subject><subject>Gravity</subject><subject>Mechatronics</subject><subject>Optical devices</subject><subject>Silicon</subject><subject>Surface morphology</subject><subject>Wet etching</subject><issn>1930-0395</issn><issn>2168-9229</issn><isbn>1424425808</isbn><isbn>9781424425808</isbn><isbn>1424425816</isbn><isbn>9781424425815</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUMtOAjEUra9EQL-ATZe6GGzvdDrt0kxQSYguYE9K547UDFPSVgxbvtwxEl2d5LyScwgZczbhnOmHWbWYvi4mwJiaiJLLAtQZGXIBQkChuDwnA-BSZRpAX_wLTF2SAdc5y1iui2syjPGDMWB9fECOldkZ65LbI906Gzx1nW1d57eYMNAvlzY0WtO2fue696wJiNR0NW28T3_EHkNyvYliizYFX2Okn7GXqQ2HmPq065Bispsfzjf0rt9zT6NrnfXdDblqTBvx9oQjsnyaLquXbP72PKse55nTLGW2AYNWCiOwqEHkUEJhACSTWtZcNbAWRkmty7Vp1laZkuUlGJAl782slPmIjH9rHSKudsFtTTisTj_m38quZQk</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Sung-Sik Yun</creator><creator>Dae-Hun Jeong</creator><creator>Jae-Yong An</creator><creator>Minho Jun</creator><creator>Jong-Hyun Lee</creator><creator>Chang-Han Je</creator><creator>Myung-Lae Lee</creator><creator>Gunn Hwang</creator><creator>Chang-Auk Choi</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200810</creationdate><title>Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon</title><author>Sung-Sik Yun ; Dae-Hun Jeong ; Jae-Yong An ; Minho Jun ; Jong-Hyun Lee ; Chang-Han Je ; Myung-Lae Lee ; Gunn Hwang ; Chang-Auk Choi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-cf2aec64a4e5d2432725a2260696d18f2b4a86997bafbc8a70372a26712430763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Capacitance</topic><topic>Capacitive sensors</topic><topic>Crystallization</topic><topic>Electrodes</topic><topic>Gravity</topic><topic>Mechatronics</topic><topic>Optical devices</topic><topic>Silicon</topic><topic>Surface morphology</topic><topic>Wet etching</topic><toplevel>online_resources</toplevel><creatorcontrib>Sung-Sik Yun</creatorcontrib><creatorcontrib>Dae-Hun Jeong</creatorcontrib><creatorcontrib>Jae-Yong An</creatorcontrib><creatorcontrib>Minho Jun</creatorcontrib><creatorcontrib>Jong-Hyun Lee</creatorcontrib><creatorcontrib>Chang-Han Je</creatorcontrib><creatorcontrib>Myung-Lae Lee</creatorcontrib><creatorcontrib>Gunn Hwang</creatorcontrib><creatorcontrib>Chang-Auk Choi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sung-Sik Yun</au><au>Dae-Hun Jeong</au><au>Jae-Yong An</au><au>Minho Jun</au><au>Jong-Hyun Lee</au><au>Chang-Han Je</au><au>Myung-Lae Lee</au><au>Gunn Hwang</au><au>Chang-Auk Choi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon</atitle><btitle>2008 IEEE Sensors</btitle><stitle>ICSENS</stitle><date>2008-10</date><risdate>2008</risdate><spage>662</spage><epage>665</epage><pages>662-665</pages><issn>1930-0395</issn><eissn>2168-9229</eissn><isbn>1424425808</isbn><isbn>9781424425808</isbn><eisbn>1424425816</eisbn><eisbn>9781424425815</eisbn><abstract>A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scalloping which were formed from silicon deep reactive ion etching (DRIE) process. The sidewalls fabricated by the (110) COPI process remarkably became vertical and flat with few nanometer roughness. The micro inclinometer with flat and vertical sensing electrodes was evaluated in terms of capacitance change and detection limit. The capacitance change of the fabricated device is from -0.246 to 0.258 pF for the inclination angle (-90deg to 90deg). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to 0.3 or less resolution for plusmn70deg.</abstract><pub>IEEE</pub><doi>10.1109/ICSENS.2008.4716528</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1930-0395 |
| ispartof | 2008 IEEE Sensors, 2008, p.662-665 |
| issn | 1930-0395 2168-9229 |
| language | eng |
| recordid | cdi_ieee_primary_4716528 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Capacitive sensors Crystallization Electrodes Gravity Mechatronics Optical devices Silicon Surface morphology Wet etching |
| title | Capacitive micro inclinometer with scalloping-free and footing-free vertical electrodes using crystalline etching of (110) silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T00%3A20%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Capacitive%20micro%20inclinometer%20with%20scalloping-free%20and%20footing-free%20vertical%20electrodes%20using%20crystalline%20etching%20of%20(110)%20silicon&rft.btitle=2008%20IEEE%20Sensors&rft.au=Sung-Sik%20Yun&rft.date=2008-10&rft.spage=662&rft.epage=665&rft.pages=662-665&rft.issn=1930-0395&rft.eissn=2168-9229&rft.isbn=1424425808&rft.isbn_list=9781424425808&rft_id=info:doi/10.1109/ICSENS.2008.4716528&rft_dat=%3Cieee_6IE%3E4716528%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424425816&rft.eisbn_list=9781424425815&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4716528&rfr_iscdi=true |