InAs quantum wires on InP substrate for VCSEL applications
Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis...
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| creator | Lamy, J.M. Paranthoen, C. Levallois, C. Nakkar, A. Folliot, H. Dehaese, O. Le Corre, A. Loualiche, S. Castany, O. Dupont, L. |
| description | Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along, an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices. |
| doi_str_mv | 10.1109/ICIPRM.2008.4703028 |
| format | Conference Proceeding |
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Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along, an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9781424422586</identifier><identifier>ISBN: 1424422582</identifier><identifier>EISBN: 9781424422593</identifier><identifier>EISBN: 1424422590</identifier><identifier>DOI: 10.1109/ICIPRM.2008.4703028</identifier><language>eng</language><publisher>IEEE</publisher><subject>Engineering Sciences ; Indium phosphide ; InP ; Molecular beam epitaxial growth ; Optics ; Photoluminescence ; Photonic ; Polarization ; quantum dashes ; Quantum dots ; Stacking ; Substrates ; Surface emitting lasers ; VCSEL ; Vertical cavity surface emitting lasers ; Wires</subject><ispartof>2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-9670-8158 ; 0000-0001-5832-0769 ; 0000-0003-1355-7871 ; 0000-0002-1392-4865</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4703028$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,777,781,786,787,882,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4703028$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-00485271$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Lamy, J.M.</creatorcontrib><creatorcontrib>Paranthoen, C.</creatorcontrib><creatorcontrib>Levallois, C.</creatorcontrib><creatorcontrib>Nakkar, A.</creatorcontrib><creatorcontrib>Folliot, H.</creatorcontrib><creatorcontrib>Dehaese, O.</creatorcontrib><creatorcontrib>Le Corre, A.</creatorcontrib><creatorcontrib>Loualiche, S.</creatorcontrib><creatorcontrib>Castany, O.</creatorcontrib><creatorcontrib>Dupont, L.</creatorcontrib><title>InAs quantum wires on InP substrate for VCSEL applications</title><title>2008 20th International Conference on Indium Phosphide and Related Materials</title><addtitle>ICIPRM</addtitle><description>Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along, an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL devices.</description><subject>Engineering Sciences</subject><subject>Indium phosphide</subject><subject>InP</subject><subject>Molecular beam epitaxial growth</subject><subject>Optics</subject><subject>Photoluminescence</subject><subject>Photonic</subject><subject>Polarization</subject><subject>quantum dashes</subject><subject>Quantum dots</subject><subject>Stacking</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><subject>VCSEL</subject><subject>Vertical cavity surface emitting lasers</subject><subject>Wires</subject><issn>1092-8669</issn><isbn>9781424422586</isbn><isbn>1424422582</isbn><isbn>9781424422593</isbn><isbn>1424422590</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkE9Pg0AQxdeoiU3lE_SyVw_Und0Fdr0RUlsSjI3_rmSgS4qhgCxo_PauaWPiXF5m8pv3JkPIAtgSgOnbNEm3Tw9LzphayogJxtUZ8XSkQHIpOQ-0OP_Xq_CCzNwm91UY6iviWfvOXMlAiEjPyF3axpZ-TNiO04F-1YOxtGtp2m6pnQo7DjgaWnUDfUueVxnFvm_qEse6a-01uaywscY76Zy83q9eko2fPa7TJM78PYRa-YgCXZ4sdoEOFAAvdqKEyp3DSzQoealAyapwkFYRltygFoGEUEgOiEzMyc3Rd49N3g_1AYfvvMM638RZ_jtz7irgEXyCYxdHtjbG_MGnT4kfkNlXjw</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Lamy, J.M.</creator><creator>Paranthoen, C.</creator><creator>Levallois, C.</creator><creator>Nakkar, A.</creator><creator>Folliot, H.</creator><creator>Dehaese, O.</creator><creator>Le Corre, A.</creator><creator>Loualiche, S.</creator><creator>Castany, O.</creator><creator>Dupont, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0001-9670-8158</orcidid><orcidid>https://orcid.org/0000-0001-5832-0769</orcidid><orcidid>https://orcid.org/0000-0003-1355-7871</orcidid><orcidid>https://orcid.org/0000-0002-1392-4865</orcidid></search><sort><creationdate>200805</creationdate><title>InAs quantum wires on InP substrate for VCSEL applications</title><author>Lamy, J.M. ; Paranthoen, C. ; Levallois, C. ; Nakkar, A. ; Folliot, H. ; Dehaese, O. ; Le Corre, A. ; Loualiche, S. ; Castany, O. ; Dupont, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h1698-aa3a0044bd5958112bd3c1f8662caea42c8184fba00987ac2ea9354163421aa03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Engineering Sciences</topic><topic>Indium phosphide</topic><topic>InP</topic><topic>Molecular beam epitaxial growth</topic><topic>Optics</topic><topic>Photoluminescence</topic><topic>Photonic</topic><topic>Polarization</topic><topic>quantum dashes</topic><topic>Quantum dots</topic><topic>Stacking</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><topic>VCSEL</topic><topic>Vertical cavity surface emitting lasers</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Lamy, J.M.</creatorcontrib><creatorcontrib>Paranthoen, C.</creatorcontrib><creatorcontrib>Levallois, C.</creatorcontrib><creatorcontrib>Nakkar, A.</creatorcontrib><creatorcontrib>Folliot, H.</creatorcontrib><creatorcontrib>Dehaese, O.</creatorcontrib><creatorcontrib>Le Corre, A.</creatorcontrib><creatorcontrib>Loualiche, S.</creatorcontrib><creatorcontrib>Castany, O.</creatorcontrib><creatorcontrib>Dupont, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lamy, J.M.</au><au>Paranthoen, C.</au><au>Levallois, C.</au><au>Nakkar, A.</au><au>Folliot, H.</au><au>Dehaese, O.</au><au>Le Corre, A.</au><au>Loualiche, S.</au><au>Castany, O.</au><au>Dupont, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>InAs quantum wires on InP substrate for VCSEL applications</atitle><btitle>2008 20th International Conference on Indium Phosphide and Related Materials</btitle><stitle>ICIPRM</stitle><date>2008-05</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1092-8669</issn><isbn>9781424422586</isbn><isbn>1424422582</isbn><eisbn>9781424422593</eisbn><eisbn>1424422590</eisbn><abstract>Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 mum photoluminescence along the crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along, an extinction coefficient of 30 dB is measured. 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| identifier | ISSN: 1092-8669 |
| ispartof | 2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-4 |
| issn | 1092-8669 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Engineering Sciences Indium phosphide InP Molecular beam epitaxial growth Optics Photoluminescence Photonic Polarization quantum dashes Quantum dots Stacking Substrates Surface emitting lasers VCSEL Vertical cavity surface emitting lasers Wires |
| title | InAs quantum wires on InP substrate for VCSEL applications |
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