Area-efficient low-cost low-dropout regulators using MOS capacitors
Traditional design of low-dropout regulators offer the use of metal-insulator-metal (MIM) compensation capacitors to prevent instability in the absence of load capacitor with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistor...
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| creator | Aminzadeh, H. Lotfi, R. Mafinezhad, K. |
| description | Traditional design of low-dropout regulators offer the use of metal-insulator-metal (MIM) compensation capacitors to prevent instability in the absence of load capacitor with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively changed according to the value of load current. The idea has been applied to stabilize a 1.2 V, 100 mA low-dropout regulator in a 0.18 mum CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100 pF MOS output capacitor and no ESR. |
| doi_str_mv | 10.1109/ISSOC.2008.4694856 |
| format | Conference Proceeding |
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In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively changed according to the value of load current. The idea has been applied to stabilize a 1.2 V, 100 mA low-dropout regulator in a 0.18 mum CMOS n-well process. 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In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively changed according to the value of load current. The idea has been applied to stabilize a 1.2 V, 100 mA low-dropout regulator in a 0.18 mum CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100 pF MOS output capacitor and no ESR.</description><subject>CMOS process</subject><subject>Metal-insulator structures</subject><subject>MIM capacitors</subject><subject>MOS capacitors</subject><subject>MOSFETs</subject><subject>Paramagnetic resonance</subject><subject>Poles and zeros</subject><subject>Regulators</subject><subject>Stability</subject><subject>Transfer functions</subject><isbn>1424425417</isbn><isbn>9781424425419</isbn><isbn>1424425425</isbn><isbn>9781424425426</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUMtqwzAQVCmBNml-oL34B-xq9bClYzB9BFJ8cO5BlVdBxY2MZFP693VIoMvCzizDMAwhj0ALAKqft23b1AWjVBWi1ELJ8oYsQTAhmJz39p9AtSDLs1BTAZzfkXVKX3QeITnn-p7Um4gmR-e89Xgasz785DakC-hiGMI0ZhGPU2_GEFM2JX86Zh9Nm1kzGOvPzweycKZPuL7eFdm_vuzr93zXvG3rzS73mo555RC4RUSLosOudEI4A8AVSLAVM8yClWpOXDooJWdIFbWoPrmZKWrBV-TpYutnk8MQ_beJv4drAfwPw8JNZA</recordid><startdate>200811</startdate><enddate>200811</enddate><creator>Aminzadeh, H.</creator><creator>Lotfi, R.</creator><creator>Mafinezhad, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200811</creationdate><title>Area-efficient low-cost low-dropout regulators using MOS capacitors</title><author>Aminzadeh, H. ; Lotfi, R. ; Mafinezhad, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7fe13ceeece4ded6f44fa1138151c72a2c1c584176f16532e080ce8b3a165e943</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CMOS process</topic><topic>Metal-insulator structures</topic><topic>MIM capacitors</topic><topic>MOS capacitors</topic><topic>MOSFETs</topic><topic>Paramagnetic resonance</topic><topic>Poles and zeros</topic><topic>Regulators</topic><topic>Stability</topic><topic>Transfer functions</topic><toplevel>online_resources</toplevel><creatorcontrib>Aminzadeh, H.</creatorcontrib><creatorcontrib>Lotfi, R.</creatorcontrib><creatorcontrib>Mafinezhad, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aminzadeh, H.</au><au>Lotfi, R.</au><au>Mafinezhad, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Area-efficient low-cost low-dropout regulators using MOS capacitors</atitle><btitle>2008 International Symposium on System-on-Chip</btitle><stitle>ISSOC</stitle><date>2008-11</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>1424425417</isbn><isbn>9781424425419</isbn><eisbn>1424425425</eisbn><eisbn>9781424425426</eisbn><abstract>Traditional design of low-dropout regulators offer the use of metal-insulator-metal (MIM) compensation capacitors to prevent instability in the absence of load capacitor with equivalent series resistance (ESR). In addition to area efficiency achieved by replacing these capacitors with MOS transistors, the location of implanted transfer function poles and zeros are adaptively changed according to the value of load current. The idea has been applied to stabilize a 1.2 V, 100 mA low-dropout regulator in a 0.18 mum CMOS n-well process. Using the proposed technique, the regulator meets stability with a small 100 pF MOS output capacitor and no ESR.</abstract><pub>IEEE</pub><doi>10.1109/ISSOC.2008.4694856</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process Metal-insulator structures MIM capacitors MOS capacitors MOSFETs Paramagnetic resonance Poles and zeros Regulators Stability Transfer functions |
| title | Area-efficient low-cost low-dropout regulators using MOS capacitors |
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